Fabrication of Ge MOS with low interface trap density by ALD of Al₂O₃ on epitaxially grown Ge

Chemical Compounds

• Interface Trap 100%
• Trap Density Measurement 91%
• Atomic Layer Epitaxy 69%
• Point Group C∞V 23%
• Surface 19%
• Percent Reduction 17%
• Charge Density 14%
• Conductance 14%
• Compound Mobility 11%
• Plasma 9%
• Reduction 6%
• Application 4%

Engineering & Materials Science

• Atomic layer deposition 92%
• Aluminum oxide 57%
• Fabrication 44%
• Molecular beam epitaxy 23%
• Charge density 21%
• Plasmas 13%
• Oxidation 13%
• Substrates 10%

Physics & Astronomy

• atomic layer epitaxy 62%
• traps 44%
• fabrication 36%
• insertion 29%
• chambers 23%
• oxidation 11%