Fabrication of germanium nanodisk array by neutral beam etching with protein as etching mask

Takuya Fujii, Takeru Okada, Taiga Isoda, Mohd Erman Syazwan, Mohamed Tahar Chentir, Kohei M Itoh, Ichiro Yamashita, Seiji Samukawa

Research output: Contribution to journalArticle

2 Citations (Scopus)


A uniform 10 nm diameter Ge two-dimensional (2D) nanodisk array structure was fabricated using iron oxide cores in a 2D closed-packed array of cage shaped proteins, ferritins, as an etching mask. Thin Ge layer on Si substrate was protected by a-Si capping layer and etched, which eliminated an uncontrollable factor of Ge native oxide. The density of Ge nanodisks was as high as 5.8 × 1011cm−2, and the center-to-center distance was estimated to be 14 nm. It was demonstrated that a quantum confinement effect can be obtained with our fabricated Ge nanodisk array by controlling the nanodisk thickness. The obtained high density Ge nanodisk is promising for Ge/Si quantum dot intermediate band solar cells and other photonics devices.

Original languageEnglish
Article number021801
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number2
Publication statusPublished - 2017 Mar 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this