Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

Original languageEnglish
Pages (from-to)396-398
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 1998 May 311998 Jun 4

Keywords

  • Anisotropic etching
  • Coulomb blockade
  • SiO/SiN double layer mask
  • Silicon-on-insulator substrate
  • Single electron transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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