Abstract
In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.
| Original language | English |
|---|---|
| Pages (from-to) | 396-398 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 1 B |
| DOIs | |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4 |
Keywords
- Anisotropic etching
- Coulomb blockade
- SiO/SiN double layer mask
- Silicon-on-insulator substrate
- Single electron transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)