Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

Original languageEnglish
Pages (from-to)396-398
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Point contacts
MOSFET devices
metal oxide semiconductors
micrometers
field effect transistors
Fabrication
fabrication
Lithography
Transistors
Electric properties
Silicon
surface layers
transistors
Substrates
lithography
Metals
electrical properties
insulators
silicon

Keywords

  • Anisotropic etching
  • Coulomb blockade
  • Silicon-on-insulator substrate
  • Single electron transistor
  • SiO/SiN double layer mask

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

@article{d977b4a371914e0099801e2d76a44d9b,
title = "Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule",
abstract = "In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.",
keywords = "Anisotropic etching, Coulomb blockade, Silicon-on-insulator substrate, Single electron transistor, SiO/SiN double layer mask",
author = "Hiroki Ishikuro and Toshiro Hiramoto",
year = "1999",
language = "English",
volume = "38",
pages = "396--398",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1 B",

}

TY - JOUR

T1 - Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

AB - In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

KW - Anisotropic etching

KW - Coulomb blockade

KW - Silicon-on-insulator substrate

KW - Single electron transistor

KW - SiO/SiN double layer mask

UR - http://www.scopus.com/inward/record.url?scp=0032607226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032607226&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032607226

VL - 38

SP - 396

EP - 398

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 B

ER -