Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule

Hiroki Ishikuro, Toshiro Hiramoto

    Research output: Contribution to journalConference article

    10 Citations (Scopus)

    Abstract

    In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effcct-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.

    Original languageEnglish
    Pages (from-to)396-398
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number1 B
    DOIs
    Publication statusPublished - 1999 Jan 1
    EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
    Duration: 1998 May 311998 Jun 4

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    Keywords

    • Anisotropic etching
    • Coulomb blockade
    • SiO/SiN double layer mask
    • Silicon-on-insulator substrate
    • Single electron transistor

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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