Fabrication of nanosilicon ink and two-dimensional array of nanocrystalline silicon quantum dots

Tetsuya Ishikawa, Hiroki Nikaido, Koichi Usami, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An assembly of nanoparticles using a colloidal solution is promising for the fabrication of future highly integrated electron and photoelectronic devices because of low manufacturing cost, flexible substrates, and alternative methods that can overcome the limitation of top-down technology. We have successfully prepared two-dimensional arrays of nanocrystalline silicon (nc-Si) quantum dots with a uniform size of 10 nm. However, the area of two-dimensional arrays has been limited because of the problems of dissolution in water and agglomeration of nc-Si due to a high surface reactivity. The key issue is the surface modification of nc-Si particles. In this study, we have demonstrated the evaluation of surface modification states of nc-Si QDs by zeta potential and particle size distribution measurements. As a result of the optimization of the surface modification process, we have successfully obtained a well-dispersed nc-Si QD solution, namely, nanosilicon ink. Furthermore, we have successfully fabricated a two-dimensional array of nc-Si QDs using the Langmuir-Blodgett film method in the entire 1 × 1 cm2 silicon substrate.

Original languageEnglish
Article number125002
JournalJapanese Journal of Applied Physics
Volume49
Issue number12
DOIs
Publication statusPublished - 2010 Dec
Externally publishedYes

Fingerprint

Nanocrystalline silicon
inks
Ink
Semiconductor quantum dots
quantum dots
Fabrication
fabrication
silicon
Surface treatment
Langmuir Blodgett films
photoelectronics
Substrates
Zeta potential
Particle size analysis
Langmuir-Blodgett films
agglomeration
particle size distribution
Dissolution
Agglomeration
dissolving

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of nanosilicon ink and two-dimensional array of nanocrystalline silicon quantum dots. / Ishikawa, Tetsuya; Nikaido, Hiroki; Usami, Koichi; Uchida, Ken; Oda, Shunri.

In: Japanese Journal of Applied Physics, Vol. 49, No. 12, 125002, 12.2010.

Research output: Contribution to journalArticle

Ishikawa, Tetsuya ; Nikaido, Hiroki ; Usami, Koichi ; Uchida, Ken ; Oda, Shunri. / Fabrication of nanosilicon ink and two-dimensional array of nanocrystalline silicon quantum dots. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 12.
@article{b6c7bb7bfd2249169ef5cf543b699d8f,
title = "Fabrication of nanosilicon ink and two-dimensional array of nanocrystalline silicon quantum dots",
abstract = "An assembly of nanoparticles using a colloidal solution is promising for the fabrication of future highly integrated electron and photoelectronic devices because of low manufacturing cost, flexible substrates, and alternative methods that can overcome the limitation of top-down technology. We have successfully prepared two-dimensional arrays of nanocrystalline silicon (nc-Si) quantum dots with a uniform size of 10 nm. However, the area of two-dimensional arrays has been limited because of the problems of dissolution in water and agglomeration of nc-Si due to a high surface reactivity. The key issue is the surface modification of nc-Si particles. In this study, we have demonstrated the evaluation of surface modification states of nc-Si QDs by zeta potential and particle size distribution measurements. As a result of the optimization of the surface modification process, we have successfully obtained a well-dispersed nc-Si QD solution, namely, nanosilicon ink. Furthermore, we have successfully fabricated a two-dimensional array of nc-Si QDs using the Langmuir-Blodgett film method in the entire 1 × 1 cm2 silicon substrate.",
author = "Tetsuya Ishikawa and Hiroki Nikaido and Koichi Usami and Ken Uchida and Shunri Oda",
year = "2010",
month = "12",
doi = "10.1143/JJAP.49.125002",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12",

}

TY - JOUR

T1 - Fabrication of nanosilicon ink and two-dimensional array of nanocrystalline silicon quantum dots

AU - Ishikawa, Tetsuya

AU - Nikaido, Hiroki

AU - Usami, Koichi

AU - Uchida, Ken

AU - Oda, Shunri

PY - 2010/12

Y1 - 2010/12

N2 - An assembly of nanoparticles using a colloidal solution is promising for the fabrication of future highly integrated electron and photoelectronic devices because of low manufacturing cost, flexible substrates, and alternative methods that can overcome the limitation of top-down technology. We have successfully prepared two-dimensional arrays of nanocrystalline silicon (nc-Si) quantum dots with a uniform size of 10 nm. However, the area of two-dimensional arrays has been limited because of the problems of dissolution in water and agglomeration of nc-Si due to a high surface reactivity. The key issue is the surface modification of nc-Si particles. In this study, we have demonstrated the evaluation of surface modification states of nc-Si QDs by zeta potential and particle size distribution measurements. As a result of the optimization of the surface modification process, we have successfully obtained a well-dispersed nc-Si QD solution, namely, nanosilicon ink. Furthermore, we have successfully fabricated a two-dimensional array of nc-Si QDs using the Langmuir-Blodgett film method in the entire 1 × 1 cm2 silicon substrate.

AB - An assembly of nanoparticles using a colloidal solution is promising for the fabrication of future highly integrated electron and photoelectronic devices because of low manufacturing cost, flexible substrates, and alternative methods that can overcome the limitation of top-down technology. We have successfully prepared two-dimensional arrays of nanocrystalline silicon (nc-Si) quantum dots with a uniform size of 10 nm. However, the area of two-dimensional arrays has been limited because of the problems of dissolution in water and agglomeration of nc-Si due to a high surface reactivity. The key issue is the surface modification of nc-Si particles. In this study, we have demonstrated the evaluation of surface modification states of nc-Si QDs by zeta potential and particle size distribution measurements. As a result of the optimization of the surface modification process, we have successfully obtained a well-dispersed nc-Si QD solution, namely, nanosilicon ink. Furthermore, we have successfully fabricated a two-dimensional array of nc-Si QDs using the Langmuir-Blodgett film method in the entire 1 × 1 cm2 silicon substrate.

UR - http://www.scopus.com/inward/record.url?scp=79551647909&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551647909&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.125002

DO - 10.1143/JJAP.49.125002

M3 - Article

AN - SCOPUS:79551647909

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

M1 - 125002

ER -