Fabrication of porous metal oxide semiconductor films by a self-template method using layered hydroxide metal acetates

Shinobu Fujihara, Eiji Hosono, Toshio Kimura

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17 Citations (Scopus)


Porous metal oxide (Co3O4, NiO, or ZnO) films were fabricated by a self-template method using layered hydroxide metal acetates (LHMA; metal = Co, Ni, or Zn) as templates. LHMAs were initially grown on glass substrates through a chemical bath deposition in methanolic-aqueous solutions of metal acetates at 60°C. The template films had a unique, nest-like morphology consisting of interlaced flake-like particles as a result of two-dimensional crystal growth of LHMAs in supersaturated solutions. The templates were successfully converted into porous Co3O4, NiO, or ZnO films by heating at 500°C for 10 min in air without microstructural deformation.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Issue number1-3 SPEC.ISS.
Publication statusPublished - 2004 Aug 1



  • Chemical bath deposition
  • Films
  • Microstructure
  • Oxide semiconductors
  • Templates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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