Fabrication of Si nanostructures for single electron device applications by anisotropic etching

Toshiro Hiramoto, Hiroki Ishikuro, Kenichi Saito, Tomoyuki Fujii, Takuya Saraya, Gen Hashiguchi, Toshiaki Ikoma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Si nanostructures for single electron device applications are successfully fabricated using a newly developed anisotropic etching technique. The minimum size of the Si nanostructures is about 10 nm, which is much smaller than the lithography limit. The novel process involves two anisotropic etching steps and one selective oxidation step, and is fully compatible with very large scale integration (VLSI) processes. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations indicate that the fabricated nanostructures are very uniform and atomically controlled. This process is promising for the future integration of single electron devices into VLSI chips.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Volume35
Edition12 B
Publication statusPublished - 1996 Dec
Externally publishedYes
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: 1996 Jul 81996 Jul 11

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period96/7/896/7/11

Fingerprint

Electron devices
Anisotropic etching
Nanostructures
VLSI circuits
Fabrication
Lithography
Atomic force microscopy
Oxidation
Scanning electron microscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hiramoto, T., Ishikuro, H., Saito, K., Fujii, T., Saraya, T., Hashiguchi, G., & Ikoma, T. (1996). Fabrication of Si nanostructures for single electron device applications by anisotropic etching. In Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B ed., Vol. 35, pp. 6347-6695)

Fabrication of Si nanostructures for single electron device applications by anisotropic etching. / Hiramoto, Toshiro; Ishikuro, Hiroki; Saito, Kenichi; Fujii, Tomoyuki; Saraya, Takuya; Hashiguchi, Gen; Ikoma, Toshiaki.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Y. Aoyagi; N. Atoda; T. Fukui; M. Komuro; M. Kotera; al et al. Vol. 35 12 B. ed. 1996. p. 6347-6695.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hiramoto, T, Ishikuro, H, Saito, K, Fujii, T, Saraya, T, Hashiguchi, G & Ikoma, T 1996, Fabrication of Si nanostructures for single electron device applications by anisotropic etching. in Y Aoyagi, N Atoda, T Fukui, M Komuro, M Kotera & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B edn, vol. 35, pp. 6347-6695, Proceedings of the 1996 9th International MicroProcess Conference, MPC'96, Kyushu, Jpn, 96/7/8.
Hiramoto T, Ishikuro H, Saito K, Fujii T, Saraya T, Hashiguchi G et al. Fabrication of Si nanostructures for single electron device applications by anisotropic etching. In Aoyagi Y, Atoda N, Fukui T, Komuro M, Kotera M, et al A, editors, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B ed. Vol. 35. 1996. p. 6347-6695
Hiramoto, Toshiro ; Ishikuro, Hiroki ; Saito, Kenichi ; Fujii, Tomoyuki ; Saraya, Takuya ; Hashiguchi, Gen ; Ikoma, Toshiaki. / Fabrication of Si nanostructures for single electron device applications by anisotropic etching. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. editor / Y. Aoyagi ; N. Atoda ; T. Fukui ; M. Komuro ; M. Kotera ; al et al. Vol. 35 12 B. ed. 1996. pp. 6347-6695
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