Fabrication of wide-gap Cu(In1-xGa x)Se2 thin film solar cells: A study on the correlation of cell performance with highly resistive i-ZnO layer thickness

S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima, S. Niki

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

The correlation of the cell performance of wide-gap Cu(In1- xGax)Se2 (CIGS) solar cells with the thickness of highly resistive i-ZnO layers, which are commonly introduced between the buffer layer and the transparent conductive oxide (TCO) layer in CIGS solar cell devices, was studied. It was found that cell parameters, in particular, the fill factor (F.F.) varied with the thickness of the i-ZnO layers and the variation of the F.F. was directly related to cell efficiency. A 16%-efficiency was achieved without use of an anti-reflection coating from wide-gap (E g∼1.3 eV) CIGS solar cells by adjusting the deposition conditions of the i-ZnO layers.

Original languageEnglish
Pages (from-to)541-548
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume87
Issue number1-4
DOIs
Publication statusPublished - 2005 May 1
Externally publishedYes

Keywords

  • Cu(In,Ga)Se
  • i-ZnO layer thickness
  • Solar cells
  • Wide-gap CIGS
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Fabrication of wide-gap Cu(In<sub>1-x</sub>Ga <sub>x</sub>)Se<sub>2</sub> thin film solar cells: A study on the correlation of cell performance with highly resistive i-ZnO layer thickness'. Together they form a unique fingerprint.

  • Cite this

    Ishizuka, S., Sakurai, K., Yamada, A., Matsubara, K., Fons, P., Iwata, K., Nakamura, S., Kimura, Y., Baba, T., Nakanishi, H., Kojima, T., & Niki, S. (2005). Fabrication of wide-gap Cu(In1-xGa x)Se2 thin film solar cells: A study on the correlation of cell performance with highly resistive i-ZnO layer thickness. Solar Energy Materials and Solar Cells, 87(1-4), 541-548. https://doi.org/10.1016/j.solmat.2004.08.017