Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, Masaya Notomi, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroshi Fukuda, Hiroyuki Shinojima, Seiichi Itabashi

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140 Citations (Scopus)

Abstract

On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).

Original languageEnglish
Article number031115
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007 Jan 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tanabe, T., Nishiguchi, K., Shinya, A., Kuramochi, E., Inokawa, H., Notomi, M., Yamada, K., Tsuchizawa, T., Watanabe, T., Fukuda, H., Shinojima, H., & Itabashi, S. (2007). Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities. Applied Physics Letters, 90(3), [031115]. https://doi.org/10.1063/1.2431767