Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3 Superlattices

J. Tominaga; A. V. Kolobov; P. Fons; T. Nakano; S. Murakami

doi:10.1002/admi.201300027

Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb₂Te₃ Superlattices

J. Tominaga, A. V. Kolobov, P. Fons, T. Nakano, S. Murakami

Research output: Contribution to journal › Article › peer-review

119 Citations (Scopus)

Abstract

A superlattice made of a topological insulator (Sb₂Te₃) and a normal insulator (ferroelectric GeTe), also called an interfacial phase-change material, are switched between the Dirac semimetal and gapped phases by applying an external electric field, which provides a platform to study topological insulators and opens new possibilities for designing phase-change memory devices.

Original language	English
Article number	1300027
Journal	Advanced Materials Interfaces
Volume	1
Issue number	1
DOIs	https://doi.org/10.1002/admi.201300027
Publication status	Published - 2014 Feb 1
Externally published	Yes

Keywords

Dirac semi-metal
Rashba splitting
phase-change memory
topological insulator

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

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@article{6ed43759211146158f1c66d8297fa0d3,

title = "Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3 Superlattices",

abstract = "A superlattice made of a topological insulator (Sb2Te3) and a normal insulator (ferroelectric GeTe), also called an interfacial phase-change material, are switched between the Dirac semimetal and gapped phases by applying an external electric field, which provides a platform to study topological insulators and opens new possibilities for designing phase-change memory devices.",

keywords = "Dirac semi-metal, Rashba splitting, phase-change memory, topological insulator",

author = "J. Tominaga and Kolobov, {A. V.} and P. Fons and T. Nakano and S. Murakami",

note = "Publisher Copyright: {\textcopyright} 2013 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2014",

month = feb,

day = "1",

doi = "10.1002/admi.201300027",

language = "English",

volume = "1",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley and Sons Ltd",

number = "1",

}

TY - JOUR

T1 - Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb2Te3 Superlattices

AU - Tominaga, J.

AU - Kolobov, A. V.

AU - Fons, P.

AU - Nakano, T.

AU - Murakami, S.

PY - 2014/2/1

Y1 - 2014/2/1

N2 - A superlattice made of a topological insulator (Sb2Te3) and a normal insulator (ferroelectric GeTe), also called an interfacial phase-change material, are switched between the Dirac semimetal and gapped phases by applying an external electric field, which provides a platform to study topological insulators and opens new possibilities for designing phase-change memory devices.

AB - A superlattice made of a topological insulator (Sb2Te3) and a normal insulator (ferroelectric GeTe), also called an interfacial phase-change material, are switched between the Dirac semimetal and gapped phases by applying an external electric field, which provides a platform to study topological insulators and opens new possibilities for designing phase-change memory devices.

KW - Dirac semi-metal

KW - Rashba splitting

KW - phase-change memory

KW - topological insulator

UR - http://www.scopus.com/inward/record.url?scp=84937207256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937207256&partnerID=8YFLogxK

U2 - 10.1002/admi.201300027

DO - 10.1002/admi.201300027

M3 - Article

AN - SCOPUS:84937207256

VL - 1

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 1

M1 - 1300027

ER -