Ferroelectric switching in epitaxial GeTe films

A. V. Kolobov, D. J. Kim, A. Giussani, P. Fons, J. Tominaga, R. Calarco, A. Gruverman

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

Original languageEnglish
Article number066101
JournalAPL Materials
Volume2
Issue number6
DOIs
Publication statusPublished - 2014 Jun 2
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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    Kolobov, A. V., Kim, D. J., Giussani, A., Fons, P., Tominaga, J., Calarco, R., & Gruverman, A. (2014). Ferroelectric switching in epitaxial GeTe films. APL Materials, 2(6), [066101]. https://doi.org/10.1063/1.4881735