Ferroelectric switching in epitaxial GeTe films

A. V. Kolobov; D. J. Kim; A. Giussani; P. Fons; J. Tominaga; R. Calarco; A. Gruverman

doi:10.1063/1.4881735

Ferroelectric switching in epitaxial GeTe films

A. V. Kolobov, D. J. Kim, A. Giussani, P. Fons, J. Tominaga, R. Calarco, A. Gruverman

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

Original language	English
Article number	066101
Journal	APL Materials
Volume	2
Issue number	6
DOIs	https://doi.org/10.1063/1.4881735
Publication status	Published - 2014 Jun 2
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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10.1063/1.4881735

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AU - Giussani, A.

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AU - Tominaga, J.

AU - Calarco, R.

AU - Gruverman, A.

PY - 2014/6/2

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AB - In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

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Ferroelectric switching in epitaxial GeTe films

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