First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

Original languageEnglish
Pages (from-to)900-903
Number of pages4
JournalSurface Science
Volume433
DOIs
Publication statusPublished - 1999 Aug 2

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Dislocations (crystals)
Epitaxial growth
Heterojunctions
Epilayers
Atoms
gallium arsenide
indium arsenide
atoms

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy. / Oyama, Norihisa; Ohta, Eiji; Takeda, Kyozaburo; Shiraishi, Kenji; Yamaguchi, Hiroshi.

In: Surface Science, Vol. 433, 02.08.1999, p. 900-903.

Research output: Contribution to journalArticle

Oyama, Norihisa ; Ohta, Eiji ; Takeda, Kyozaburo ; Shiraishi, Kenji ; Yamaguchi, Hiroshi. / First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy. In: Surface Science. 1999 ; Vol. 433. pp. 900-903.
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