First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Norihisa Oyama; Eiji Ohta; Kyozaburo Takeda; Kenji Shiraishi; Hiroshi Yamaguchi

doi:10.1016/S0039-6028(99)00524-5

First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Norihisa Oyama, Eiji Ohta, Kyozaburo Takeda, Kenji Shiraishi, Hiroshi Yamaguchi

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

Original language	English
Pages (from-to)	900-903
Number of pages	4
Journal	Surface Science
Volume	433
DOIs	https://doi.org/10.1016/S0039-6028(99)00524-5
Publication status	Published - 1999 Aug 2
Externally published	Yes
Event	Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, UK Duration: 1998 Aug 31 → 1998 Sept 4

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(99)00524-5

Cite this

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title = "First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy",

abstract = "The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.",

author = "Norihisa Oyama and Eiji Ohta and Kyozaburo Takeda and Kenji Shiraishi and Hiroshi Yamaguchi",

note = "Funding Information: This work was partly supported by the JSPS Research for Future Programs in the Area of Atomic Scale Surface and Interface Dynamics, the High-tech Research Center Project, and the Ministry of Education, Science, Sports and Culture of Japan.; Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) ; Conference date: 31-08-1998 Through 04-09-1998",

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doi = "10.1016/S0039-6028(99)00524-5",

language = "English",

volume = "433",

pages = "900--903",

journal = "Surface Science",

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TY - JOUR

T1 - First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

AU - Oyama, Norihisa

AU - Ohta, Eiji

AU - Takeda, Kyozaburo

AU - Shiraishi, Kenji

AU - Yamaguchi, Hiroshi

N1 - Funding Information: This work was partly supported by the JSPS Research for Future Programs in the Area of Atomic Scale Surface and Interface Dynamics, the High-tech Research Center Project, and the Ministry of Education, Science, Sports and Culture of Japan.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

AB - The misfit dislocation core structures in InAs/GaAs(110) heterostructures were calculated for InAs thicknesses of 2 and 4 ML using first-principles calculations. Dislocation cores with asymmetric five-fold coordinated In atoms were formed at the InAs/GaAs interface. This core structure is maintained even if the thickness of InAs epilayer increases. We also calculated for the GaAs/InAs(110) heterostructure and the core has a different structure at the very initial stage of heteroepitaxy.

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U2 - 10.1016/S0039-6028(99)00524-5

DO - 10.1016/S0039-6028(99)00524-5

M3 - Conference article

AN - SCOPUS:0033329446

SN - 0039-6028

VL - 433

SP - 900

EP - 903

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)

Y2 - 31 August 1998 through 4 September 1998

ER -

First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

Abstract

ASJC Scopus subject areas

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