First-principles calculation of X-ray photoelectron spectroscopy binding energy shift for nitrogen and phosphorus defects in 3C-silicon carbide

Engineering & Materials Science

• Binding energy 100%
• X ray photoelectron spectroscopy 76%
• Phosphorus 76%
• Silicon carbide 67%
• Relaxation 58%
• Nitrogen 58%
• Defects 43%
• Impurities 40%
• Core levels 33%
• Defect structures 33%
• Wave functions 29%
• Electron energy levels 24%
• Energy gap 23%
• Atoms 21%
• Electrons 21%

Physics & Astronomy

• phosphorus 61%
• silicon carbides 60%
• binding energy 53%
• photoelectron spectroscopy 51%
• nitrogen 46%
• energy of formation 43%
• shift 38%
• defects 34%
• x rays 28%
• impurities 27%
• energy 18%
• energy levels 17%
• wave functions 16%
• gradients 13%
• approximation 10%
• atoms 10%
• electrons 8%