First-principles calculations of uniaxial strain effects on manganese in silicon

Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Uniaxial strain effects on manganese in silicon are investigated using the first-principles calculations. Manganese doping is shown to enhance the increase rate of vertical strain as a function of lateral strain by ∼10%. The formation energy of manganese in silicon decreases by 0.1 eV at a lateral strain of 3.3%. The magnetic moments of manganese remain at 3μB being independent of the strain magnitude. These results are found in both substitutional and interstitial tetrahedral manganese. An analysis of detailed calculation results reveals that these properties are realized by the impact of uniaxial strain on the electronic states of manganese.

Original languageEnglish
Pages (from-to)26-30
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number1
DOIs
Publication statusPublished - 2008 Jan 18

Fingerprint

axial strain
Manganese
manganese
Silicon
silicon
Electronic states
energy of formation
Magnetic moments
interstitials
magnetic moments
Doping (additives)
electronics

Keywords

  • First-principle calculation
  • Magnetism
  • Manganese impurity
  • Stability
  • Strained silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

First-principles calculations of uniaxial strain effects on manganese in silicon. / Yabuuchi, Shin; Ohta, Eiji; Kageshima, Hiroyuki.

In: Japanese Journal of Applied Physics, Vol. 47, No. 1, 18.01.2008, p. 26-30.

Research output: Contribution to journalArticle

Yabuuchi, Shin ; Ohta, Eiji ; Kageshima, Hiroyuki. / First-principles calculations of uniaxial strain effects on manganese in silicon. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 1. pp. 26-30.
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