Abstract
We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 256-259 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 201 |
| DOIs | |
| Publication status | Published - 1999 May |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies. / Oyama, Norihisa; Ohta, Eiji; Takeda, Kyozaburo; Shiraishi, Kenji; Yamaguchi, Hiroshi.
In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 256-259.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies
AU - Oyama, Norihisa
AU - Ohta, Eiji
AU - Takeda, Kyozaburo
AU - Shiraishi, Kenji
AU - Yamaguchi, Hiroshi
PY - 1999/5
Y1 - 1999/5
N2 - We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.
AB - We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.
UR - http://www.scopus.com/inward/record.url?scp=0032643180&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032643180&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01333-5
DO - 10.1016/S0022-0248(98)01333-5
M3 - Article
AN - SCOPUS:0032643180
VL - 201
SP - 256
EP - 259
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -