Abstract
We investigated the atomic and electronic structures of the misfit dislocations of InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heterointerfaces by first-principles calculations and scanning tunneling microscopy tSTM). The calculated results show that the core confined at the InAs/GaAs(1 1 0) heterointerface has five-fold coordinated In atoms. The surface just above the dislocation line was depressed and the calculated vertical displacement was about 0.52 angstroms when the InAs epilayer thickness is 4 ML, which is in good agreement with the STM observations. In the GaAs/InAs heteroepitaxy, core structures drastically change with the increase of GaAs epilayer thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 256-259 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 201 |
| DOIs | |
| Publication status | Published - 1999 May |
| Event | Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 1998 Aug 31 → 1998 Sep 4 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Oyama, N., Ohta, E., Takeda, K., Shiraishi, K., & Yamaguchi, H. (1999). First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(1 1 0) and GaAs/InAs(1 1 0) heteroepitaxies. Journal of Crystal Growth, 201, 256-259. https://doi.org/10.1016/S0022-0248(98)01333-5