First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

Hiroki Kishi, Miki Miyazawa, Naoki Matsushima, Jun Yamauchi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.

Original languageEnglish
Pages (from-to)226-229
Number of pages4
JournalAIP Conference Proceedings
Volume1583
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China
Duration: 2014 Aug 182014 Aug 22

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Keywords

  • As
  • defect
  • first-principles calculation
  • Si
  • X-ray photoelectron spectroscopy
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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