TY - JOUR
T1 - First-principles study of charging effect on magnetism of Pd (100) ultrathin films
AU - Aihara, Shogo
AU - Kageshima, Hiroyuki
AU - Sakai, Tomohiro
AU - Sato, Tetsuya
N1 - Funding Information:
The authors would like to thank the Supercomputer Center, Institute for Solid State Physics, University of Tokyo for the use of NEC SX-9. This work was supported by the Grant-in-Aid for Scientific Research Program (No. 24310093) from Ministry of Education, Science, Sports and Culture of Japan.
PY - 2012/10/1
Y1 - 2012/10/1
N2 - Calculations of electronic structure of free-standing Pd (100) ultrathin films of 2-6 monolayers (MLs), using first-principles calculation with pseudopotential method, show stable ferromagnetism in 4 ML and induced magnetic phase transition in 3 and 4 MLs by charging. The ferromagnetism, appearing due to large density of states attributed to 4d xz,yz flat bands at Fermi energy ε F, can be manipulated by charging through the change in the contribution of the 4d flat bands to ε F, where the surface carrier density of >10 13 cm -2 is necessary for the magnetic phase transition. This can be experimentally realized using techniques such as electric double layer transistors.
AB - Calculations of electronic structure of free-standing Pd (100) ultrathin films of 2-6 monolayers (MLs), using first-principles calculation with pseudopotential method, show stable ferromagnetism in 4 ML and induced magnetic phase transition in 3 and 4 MLs by charging. The ferromagnetism, appearing due to large density of states attributed to 4d xz,yz flat bands at Fermi energy ε F, can be manipulated by charging through the change in the contribution of the 4d flat bands to ε F, where the surface carrier density of >10 13 cm -2 is necessary for the magnetic phase transition. This can be experimentally realized using techniques such as electric double layer transistors.
UR - http://www.scopus.com/inward/record.url?scp=84867500598&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867500598&partnerID=8YFLogxK
U2 - 10.1063/1.4757409
DO - 10.1063/1.4757409
M3 - Article
AN - SCOPUS:84867500598
SN - 0021-8979
VL - 112
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 7
M1 - 073910
ER -