Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

T. Saraya, M. Takamiya, T. N. Duyet, T. Tanaka, H. Ishikuro, T. Hiramoto, T. Ikoma

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Abstract

Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.

Original languageEnglish
Pages70-71
Number of pages2
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: 1996 Sep 301996 Oct 3

Other

OtherProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period96/9/3096/10/3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Saraya, T., Takamiya, M., Duyet, T. N., Tanaka, T., Ishikuro, H., Hiramoto, T., & Ikoma, T. (1996). Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V. 70-71. Paper presented at Proceedings of the 1996 IEEE International SOI Conference, Sanibel Island, FL, USA, .