Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

T. Saraya; M. Takamiya; T. N. Duyet; T. Tanaka; H. Ishikuro; T. Hiramoto; T. Ikoma

Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

T. Saraya, M. Takamiya, T. N. Duyet, T. Tanaka, H. Ishikuro, T. Hiramoto, T. Ikoma

Research output: Contribution to conference › Paper › peer-review

Abstract

Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.

Original language	English
Pages	70-71
Number of pages	2
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA Duration: 1996 Sept 30 → 1996 Oct 3

Other

Other	Proceedings of the 1996 IEEE International SOI Conference
City	Sanibel Island, FL, USA
Period	96/9/30 → 96/10/3

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@conference{66a9540802a8417aa0609e0e59fb117b,

title = "Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V",

abstract = "Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.",

author = "T. Saraya and M. Takamiya and Duyet, {T. N.} and T. Tanaka and H. Ishikuro and T. Hiramoto and T. Ikoma",

year = "1996",

language = "English",

pages = "70--71",

note = "Proceedings of the 1996 IEEE International SOI Conference ; Conference date: 30-09-1996 Through 03-10-1996",

}

TY - CONF

T1 - Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

AU - Saraya, T.

AU - Takamiya, M.

AU - Duyet, T. N.

AU - Tanaka, T.

AU - Ishikuro, H.

AU - Hiramoto, T.

AU - Ikoma, T.

PY - 1996

Y1 - 1996

N2 - Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.

AB - Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030403402&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030403402

SP - 70

EP - 71

T2 - Proceedings of the 1996 IEEE International SOI Conference

Y2 - 30 September 1996 through 3 October 1996

ER -

Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

Abstract

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ASJC Scopus subject areas

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