TY - JOUR
T1 - Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition
AU - Tatebayashi, J.
AU - Ota, Y.
AU - Ishida, S.
AU - Nishioka, M.
AU - Iwamoto, S.
AU - Arakawa, Y.
PY - 2013/5/1
Y1 - 2013/5/1
N2 - We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QDs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identi.ed by structural analyses and photoluminescence characterization. Optical characterization at 10 K corroborates formation of high-quality, multi-stack InGaAs/GaAs QD-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QDs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QD-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform.
AB - We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QDs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identi.ed by structural analyses and photoluminescence characterization. Optical characterization at 10 K corroborates formation of high-quality, multi-stack InGaAs/GaAs QD-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QDs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QD-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform.
KW - A2. Metalorganic vapor phase epitaxy
KW - B2. Semiconductor III-V materials
UR - http://www.scopus.com/inward/record.url?scp=84901590657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84901590657&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.11.063
DO - 10.1016/j.jcrysgro.2012.11.063
M3 - Article
AN - SCOPUS:84901590657
SN - 0022-0248
VL - 370
SP - 299
EP - 302
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -