Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition

J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QDs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identi.ed by structural analyses and photoluminescence characterization. Optical characterization at 10 K corroborates formation of high-quality, multi-stack InGaAs/GaAs QD-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QDs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QD-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1
Externally publishedYes

Keywords

  • A2. Metalorganic vapor phase epitaxy
  • B2. Semiconductor III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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