Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

J. Tatebayashi; Y. Ota; D. Karunathillake; S. Ishida; M. Nishioka; S. Iwamoto; Y. Arakawa

doi:10.1557/opl.2012.912

Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

J. Tatebayashi, Y. Ota, D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μe V are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.

Original language	English
Title of host publication	Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials
Pages	115-119
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2012.912
Publication status	Published - 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: 2012 Apr 9 → 2012 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1439
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	12/4/9 → 12/4/13

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2012.912

Cite this

Tatebayashi, J., Ota, Y., Karunathillake, D., Ishida, S., Nishioka, M., Iwamoto, S., & Arakawa, Y. (2012). Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. In Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials (pp. 115-119). (Materials Research Society Symposium Proceedings; Vol. 1439). https://doi.org/10.1557/opl.2012.912

Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. / Tatebayashi, J.; Ota, Y.; Karunathillake, D. et al.

Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials. 2012. p. 115-119 (Materials Research Society Symposium Proceedings; Vol. 1439).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tatebayashi, J, Ota, Y, Karunathillake, D, Ishida, S, Nishioka, M, Iwamoto, S & Arakawa, Y 2012, Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. in Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials. Materials Research Society Symposium Proceedings, vol. 1439, pp. 115-119, 2012 MRS Spring Meeting, San Francisco, CA, United States, 12/4/9. https://doi.org/10.1557/opl.2012.912

Tatebayashi J, Ota Y, Karunathillake D, Ishida S, Nishioka M, Iwamoto S et al. Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. In Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials. 2012. p. 115-119. (Materials Research Society Symposium Proceedings). doi: 10.1557/opl.2012.912

Tatebayashi, J. ; Ota, Y. ; Karunathillake, D. et al. / Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources. Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials. 2012. pp. 115-119 (Materials Research Society Symposium Proceedings).

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abstract = "We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μe V are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.",

author = "J. Tatebayashi and Y. Ota and D. Karunathillake and S. Ishida and M. Nishioka and S. Iwamoto and Y. Arakawa",

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AU - Nishioka, M.

AU - Iwamoto, S.

AU - Arakawa, Y.

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AB - We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μe V are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.

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Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

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