Formation of nitrogen-vacancy centers in homoepitaxial diamond thin films grown via microwave plasma-assisted chemical vapor deposition

Hideyuki Watanabe, Hitoshi Umezawa, Toyofumi Ishikawa, Kazuki Kaneko, Shinichi Shikata, Junko Hayase, Kohei M Itoh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A model for controlling the two-dimensional distribution of negatively charged nitrogen-vacancy (NV- ) fluorescent centers near the surface of a diamond crystal is presented, using only a microwave plasma-assisted chemical vapor deposition (CVD) method. In this approach, a CVD diamond layer is homoepitaxialy grown via microwave plasma-assisted CVD using an isotopically enriched methane (12CH4), hydrogen (H2), and nitrogen (N2) gas mixture on patterned diamond (0 0 1). When the surface is imaged by means of confocal microscope photoluminescence mapping, fine grooves are observed to have been generated artificially on the diamond surface. NV- centers are found to be distributed selectively into these grooves. These results demonstrate an effective means for the formation of NV- centers of selectable size and density via microwave plasma-assisted CVD, with potential application in the production of diamond quantum sensors.

Original languageEnglish
Article number7466817
Pages (from-to)614-618
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume15
Issue number4
DOIs
Publication statusPublished - 2016 Jul 1
Externally publishedYes

Keywords

  • Diamond
  • doping
  • groove structure
  • homoepitaxial
  • microwave plasma-assisted chemical vapor deposition
  • nitrogen-vacancy centers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

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