Formation of shallow energy levels in Mn+ implanted GaAs with extremely low background impurity concentration

Honglie Shen, Yunosuke Makita, Akimasa Yamada, Shigeru Niki, Tsutomu Iida, Hajime Shibata, Paul Fons, Akira Obara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×1019cm-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.

Original languageEnglish
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages343-348
Number of pages6
ISBN (Print)1558992154
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Shen, H., Makita, Y., Yamada, A., Niki, S., Iida, T., Shibata, H., Fons, P., & Obara, A. (1994). Formation of shallow energy levels in Mn+ implanted GaAs with extremely low background impurity concentration. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 343-348). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.