Free induction decay and quantum beat of excitons in ZnSe

T. Saiki; K. Takeuchi; K. Ema; M. Kuwata-Gonokami; K. Ohkawa; T. Mitsuyu

doi:10.1016/0022-0248(94)90911-3

Free induction decay and quantum beat of excitons in ZnSe

T. Saiki, K. Takeuchi, K. Ema, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu

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8 Citations (Scopus)

Abstract

We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.

Original language	English
Pages (from-to)	805-808
Number of pages	4
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90911-3
Publication status	Published - 1994 Apr 2
Externally published	Yes

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ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Saiki, T., Takeuchi, K., Ema, K., Kuwata-Gonokami, M., Ohkawa, K., & Mitsuyu, T. (1994). Free induction decay and quantum beat of excitons in ZnSe. Journal of Crystal Growth, 138(1-4), 805-808. https://doi.org/10.1016/0022-0248(94)90911-3

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AU - Saiki, T.

AU - Takeuchi, K.

AU - Ema, K.

AU - Kuwata-Gonokami, M.

AU - Ohkawa, K.

AU - Mitsuyu, T.

PY - 1994/4/2

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N2 - We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.

AB - We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.

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10.1016/0022-0248(94)90911-3