Abstract
We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.
| Original language | English |
|---|---|
| Pages (from-to) | 805-808 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 138 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1994 Apr 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Free induction decay and quantum beat of excitons in ZnSe. / Saiki, Toshiharu; Takeuchi, K.; Ema, K.; Kuwata-Gonokami, M.; Ohkawa, K.; Mitsuyu, T.
In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 805-808.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Free induction decay and quantum beat of excitons in ZnSe
AU - Saiki, Toshiharu
AU - Takeuchi, K.
AU - Ema, K.
AU - Kuwata-Gonokami, M.
AU - Ohkawa, K.
AU - Mitsuyu, T.
PY - 1994/4/2
Y1 - 1994/4/2
N2 - We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.
AB - We study coherent transient phenomena of excitons using femtosecond time-resolved four-wave-mixing (TR- FWM) in two types of high quality thin films of ZnSe; one is a homo-epitaxial film (1.2 μm thickness) and the other is a very thin (50nm) hetero-epitaxial film on GaAs substrate. Free induction decay (FID) behavior of the third-order polarization is clearly observed. We obtained the same values of exciton dephasing time from the temporal measurements, the decay time of FID, and the frequency domain measurements, analyses of reflection spectra. This implies that the excitons in ZnSe films are homogeneous. In the thin film sample, we observe a beat signal in time-integrated and time-resolved FWM. Based on the perturbational calculation, we conclude that the beat originates from the quantum interference of heavy- and light-hole excitons.
UR - http://www.scopus.com/inward/record.url?scp=0028760618&partnerID=8YFLogxK
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U2 - 10.1016/0022-0248(94)90911-3
DO - 10.1016/0022-0248(94)90911-3
M3 - Article
AN - SCOPUS:0028760618
VL - 138
SP - 805
EP - 808
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -