Abstract
Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3–7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect.
| Original language | English |
|---|---|
| Pages (from-to) | 908-915 |
| Number of pages | 8 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1995 Sep |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Inoue, S., Fujii, T., Ueno, Y., & Kannari, F. (1995). F2 Laser Deposition of CdTe Microcrystallites-Doped Fluoropolymer Thin Films. IEEE Journal of Selected Topics in Quantum Electronics, 1(3), 908-915. https://doi.org/10.1109/2944.473678