Abstract
Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect.
| Original language | English |
|---|---|
| Pages (from-to) | 908-915 |
| Number of pages | 8 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1995 Sep |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
F2 laser deposition of CdTe microcrystallites-doped fluoropolymer thin films. / Inoue, Shingo; Fujii, Takeo; Ueno, Yoshiaki; Kannari, Fumihiko.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 3, 09.1995, p. 908-915.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - F2 laser deposition of CdTe microcrystallites-doped fluoropolymer thin films
AU - Inoue, Shingo
AU - Fujii, Takeo
AU - Ueno, Yoshiaki
AU - Kannari, Fumihiko
PY - 1995/9
Y1 - 1995/9
N2 - Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect.
AB - Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect.
UR - http://www.scopus.com/inward/record.url?scp=0029370434&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029370434&partnerID=8YFLogxK
U2 - 10.1109/2944.473678
DO - 10.1109/2944.473678
M3 - Article
AN - SCOPUS:0029370434
VL - 1
SP - 908
EP - 915
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 3
ER -