Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching

Kazunobu Maeshige, Gentaro Washio, Takashi Yagisawa, Toshiaki Makabe

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

A capacitively coupled plasma (CCP) with a different frequency source at each of two parallel plates is a powerful tool for SiO 2 etching. A time modulation of two-frequency CCP by a pulsed-power operation will be one of the practical solutions in the next generation of etchers, and will allow charging-free plasma processes for high-aspect-ratio holes or trench etching. We numerically predict the structure and functions of a pulsed two-frequency CCP in CF 4(5%)/Ar, and discuss its ability to generate charge-free plasma processes. We also investigate the functional separation between plasma production by very high frequency (100 MHz) and bias voltage application by low frequency (1 MHz). Alternate injections of high-energy positive and negative ions are predicted during the off-phase of a pulsed two-frequency CCP.

Original languageEnglish
Pages (from-to)9494-9501
Number of pages8
JournalJournal of Applied Physics
Volume91
Issue number12
DOIs
Publication statusPublished - 2002 Jun 15

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etching
very high frequencies
high aspect ratio
parallel plates
positive ions
negative ions
charging
injection
low frequencies
modulation
electric potential
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching. / Maeshige, Kazunobu; Washio, Gentaro; Yagisawa, Takashi; Makabe, Toshiaki.

In: Journal of Applied Physics, Vol. 91, No. 12, 15.06.2002, p. 9494-9501.

Research output: Contribution to journalArticle

Maeshige, Kazunobu ; Washio, Gentaro ; Yagisawa, Takashi ; Makabe, Toshiaki. / Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 12. pp. 9494-9501.
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