Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining

Jiwang Yan, Tooru Asami, Hirofumi Harada, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

147 Citations (Scopus)

Abstract

Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.

Original languageEnglish
Pages (from-to)378-386
Number of pages9
JournalPrecision Engineering
Volume33
Issue number4
DOIs
Publication statusPublished - 2009 Oct 1
Externally publishedYes

Keywords

  • Dislocation
  • Ductile machining
  • High pressure
  • Nano precision cutting
  • Phase transformation
  • Single crystal silicon
  • Subsurface damage

ASJC Scopus subject areas

  • Engineering(all)

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