A study to investigate the Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films was presented. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600 °C using trifluoroacetic acid. It was observed that the Ga doping increases the cathodoluminescence (CL) intensity of the film, which was attributed to suppression of charge accumulation on the films.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Aug 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)