Ga-doping effects on electrical and luminescent properties of ZnO: (La,Eu) OF red phosphor thin films

Shinobu Fujihara, Akira Suzuki, Toshio Kimura

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

A study to investigate the Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films was presented. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600 °C using trifluoroacetic acid. It was observed that the Ga doping increases the cathodoluminescence (CL) intensity of the film, which was attributed to suppression of charge accumulation on the films.

Original languageEnglish
Pages (from-to)2411-2416
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
Publication statusPublished - 2003 Aug 15

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phosphors
electrical properties
thin films
cathodoluminescence
retarding
gels
acids
glass

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Ga-doping effects on electrical and luminescent properties of ZnO : (La,Eu) OF red phosphor thin films. / Fujihara, Shinobu; Suzuki, Akira; Kimura, Toshio.

In: Journal of Applied Physics, Vol. 94, No. 4, 15.08.2003, p. 2411-2416.

Research output: Contribution to journalArticle

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