Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu) OF red phosphor thin films

Shinobu Fujihara; Akira Suzuki; Toshio Kimura

doi:10.1063/1.1594817

Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu) OF red phosphor thin films

Shinobu Fujihara, Akira Suzuki, Toshio Kimura

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

A study to investigate the Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films was presented. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600 °C using trifluoroacetic acid. It was observed that the Ga doping increases the cathodoluminescence (CL) intensity of the film, which was attributed to suppression of charge accumulation on the films.

Original language	English
Pages (from-to)	2411-2416
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1594817
Publication status	Published - 2003 Aug 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu) OF red phosphor thin films

Abstract

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