GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying

Hiroki Kurumatani, Seiichiro Katsura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.

Original languageEnglish
Title of host publicationProceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1941-1946
Number of pages6
ISBN (Electronic)9781509014125
DOIs
Publication statusPublished - 2017 Aug 3
Event26th IEEE International Symposium on Industrial Electronics, ISIE 2017 - Edinburgh, Scotland, United Kingdom
Duration: 2017 Jun 182017 Jun 21

Other

Other26th IEEE International Symposium on Industrial Electronics, ISIE 2017
CountryUnited Kingdom
CityEdinburgh, Scotland
Period17/6/1817/6/21

Fingerprint

Gallium nitride
High electron mobility transistors
Electric potential
Switching frequency
Heat losses
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Kurumatani, H., & Katsura, S. (2017). GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying. In Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017 (pp. 1941-1946). [8001548] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISIE.2017.8001548

GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying. / Kurumatani, Hiroki; Katsura, Seiichiro.

Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1941-1946 8001548.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurumatani, H & Katsura, S 2017, GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying. in Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017., 8001548, Institute of Electrical and Electronics Engineers Inc., pp. 1941-1946, 26th IEEE International Symposium on Industrial Electronics, ISIE 2017, Edinburgh, Scotland, United Kingdom, 17/6/18. https://doi.org/10.1109/ISIE.2017.8001548
Kurumatani H, Katsura S. GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying. In Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1941-1946. 8001548 https://doi.org/10.1109/ISIE.2017.8001548
Kurumatani, Hiroki ; Katsura, Seiichiro. / GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying. Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1941-1946
@inproceedings{668d21c698dc45efbfc42634cca0c758,
title = "GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying",
abstract = "The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.",
author = "Hiroki Kurumatani and Seiichiro Katsura",
year = "2017",
month = "8",
day = "3",
doi = "10.1109/ISIE.2017.8001548",
language = "English",
pages = "1941--1946",
booktitle = "Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying

AU - Kurumatani, Hiroki

AU - Katsura, Seiichiro

PY - 2017/8/3

Y1 - 2017/8/3

N2 - The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.

AB - The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.

UR - http://www.scopus.com/inward/record.url?scp=85029910476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029910476&partnerID=8YFLogxK

U2 - 10.1109/ISIE.2017.8001548

DO - 10.1109/ISIE.2017.8001548

M3 - Conference contribution

AN - SCOPUS:85029910476

SP - 1941

EP - 1946

BT - Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -