GaN LD pumped Pr3+-doped solid-state laser

K. Hashimoto, T. Kamimura, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Efficient and high-power diode-pumped Pr3+ doped solid-state laser are reported. We also report on characteristics of Pr3+ doped material such as spontaneous emission spectra, lifetimes, and thermal loading which are critical for laser display applications.

Original languageEnglish
Title of host publicationAdvanced Solid-State Photonics, ASSP 2008
Publication statusPublished - 2008
EventAdvanced Solid-State Photonics, ASSP 2008 - Nara, Japan
Duration: 2008 Jan 272008 Jan 30

Other

OtherAdvanced Solid-State Photonics, ASSP 2008
CountryJapan
CityNara
Period08/1/2708/1/30

Fingerprint

solid state lasers
spontaneous emission
emission spectra
diodes
life (durability)
lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Hashimoto, K., Kamimura, T., & Kannari, F. (2008). GaN LD pumped Pr3+-doped solid-state laser. In Advanced Solid-State Photonics, ASSP 2008

GaN LD pumped Pr3+-doped solid-state laser. / Hashimoto, K.; Kamimura, T.; Kannari, Fumihiko.

Advanced Solid-State Photonics, ASSP 2008. 2008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hashimoto, K, Kamimura, T & Kannari, F 2008, GaN LD pumped Pr3+-doped solid-state laser. in Advanced Solid-State Photonics, ASSP 2008. Advanced Solid-State Photonics, ASSP 2008, Nara, Japan, 08/1/27.
Hashimoto K, Kamimura T, Kannari F. GaN LD pumped Pr3+-doped solid-state laser. In Advanced Solid-State Photonics, ASSP 2008. 2008
Hashimoto, K. ; Kamimura, T. ; Kannari, Fumihiko. / GaN LD pumped Pr3+-doped solid-state laser. Advanced Solid-State Photonics, ASSP 2008. 2008.
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