GaN LD pumped Pr3+-doped solid-state laser

K. Hashimoto, T. Kamimura, F. Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Efficient and high-power diode-pumped Pr3+ doped solid-state laser are reported. We also report on characteristics of Pr3+ doped material such as spontaneous emission spectra, lifetimes, and thermal loading which are critical for laser display applications.

Original languageEnglish
Title of host publicationAdvanced Solid-State Photonics, ASSP 2008
PublisherOptical Society of America (OSA)
PagesWE13
ISBN (Print)1557528500, 9781557528506
DOIs
Publication statusPublished - 2008 Jan 1
EventAdvanced Solid-State Photonics, ASSP 2008 - Nara, Japan
Duration: 2008 Jan 272008 Jan 30

Publication series

NameAdvanced Solid-State Photonics, ASSP 2008

Other

OtherAdvanced Solid-State Photonics, ASSP 2008
CountryJapan
CityNara
Period08/1/2708/1/30

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'GaN LD pumped Pr<sup>3+</sup>-doped solid-state laser'. Together they form a unique fingerprint.

Cite this