Ge-Au eutectic bonding of Ge {100} single crystals

W. B. Knowlton, Kohei M Itoh, J. W. Beeman, J. H. Emes, D. Loretto, E. E. Haller

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of Au ranging from 900Å/surface to 300Å/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500Å/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300Å/surface Au sample show <100> epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal <110> heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200Å/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150Å across an interval of 1mm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons.

Original languageEnglish
Pages (from-to)343-348
Number of pages6
JournalJournal of Low Temperature Physics
Volume93
Issue number3-4
DOIs
Publication statusPublished - 1993 Nov
Externally publishedYes

Fingerprint

eutectics
Eutectics
Single crystals
single crystals
Epitaxial growth
Single crystal surfaces
transmission electron microscopy
Lattice mismatch
Phonons
Ballistics
High resolution transmission electron microscopy
Polishing
polishing
crystal surfaces
Interferometry
continuity
ballistics
Optical microscopy
interferometry
phonons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Knowlton, W. B., Itoh, K. M., Beeman, J. W., Emes, J. H., Loretto, D., & Haller, E. E. (1993). Ge-Au eutectic bonding of Ge {100} single crystals. Journal of Low Temperature Physics, 93(3-4), 343-348. https://doi.org/10.1007/BF00693444

Ge-Au eutectic bonding of Ge {100} single crystals. / Knowlton, W. B.; Itoh, Kohei M; Beeman, J. W.; Emes, J. H.; Loretto, D.; Haller, E. E.

In: Journal of Low Temperature Physics, Vol. 93, No. 3-4, 11.1993, p. 343-348.

Research output: Contribution to journalArticle

Knowlton, WB, Itoh, KM, Beeman, JW, Emes, JH, Loretto, D & Haller, EE 1993, 'Ge-Au eutectic bonding of Ge {100} single crystals', Journal of Low Temperature Physics, vol. 93, no. 3-4, pp. 343-348. https://doi.org/10.1007/BF00693444
Knowlton WB, Itoh KM, Beeman JW, Emes JH, Loretto D, Haller EE. Ge-Au eutectic bonding of Ge {100} single crystals. Journal of Low Temperature Physics. 1993 Nov;93(3-4):343-348. https://doi.org/10.1007/BF00693444
Knowlton, W. B. ; Itoh, Kohei M ; Beeman, J. W. ; Emes, J. H. ; Loretto, D. ; Haller, E. E. / Ge-Au eutectic bonding of Ge {100} single crystals. In: Journal of Low Temperature Physics. 1993 ; Vol. 93, No. 3-4. pp. 343-348.
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