Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation

Hiroaki Imai, K. Arai, J. Isoya, H. Hosono, Y. Abe, H. Imagawa

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

Generation of typical paramagnetic centers by γ irradiation was studied for various kinds of synthetic silica glasses. Growth behavior of E' centers and nonbridging oxygen hole centers (NBOHC's) with γ-ray dose depends on contained preexisting point defects. By irradiation at room temperature, E' centers grow linearly and show a saturating tendency in silicas that contain precursors for E' centers, such as oxygen-deficient centers (ODC's), Si-H bonds or Si-Cl bonds. In silicas that contain very few precursors for E' centers, the growth of E' centers with the dose substantially equals that of NBOHC's and both follow a sublinear growth law in which the concentration of the defects is proportional to the square root of the dose. These results lead to the conclusion that γ irradiation fundamentally creates defect pairs of an E' center and an oxygen hole center from an intrinsic Si-O network of amorphous silica; this is in addition to a large amount of E' centers induced from preexisting point defects as precursors. By irradiation at 77 K, E' centers and self-trapped holes are suggested to be formed as the defect pair from the Si-O network, while the conversion of the precursors into E' centers is probably lessened. Concentration of E' centers generated by γ irradiation is almost the same as that of irradiation of ultraviolet lasers and x rays if they are compared based on the absorbed energy. Thus, defect generation with γ rays is suggested to involve similar fundamental processes as those with photons, which have much smaller energy than γ rays.

Original languageEnglish
Pages (from-to)3116-3123
Number of pages8
JournalPhysical Review B
Volume48
Issue number5
DOIs
Publication statusPublished - 1993
Externally publishedYes

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silica glass
Fused silica
Irradiation
Oxygen
irradiation
oxygen
Silicon Dioxide
Defects
Silica
Point defects
rays
Ultraviolet lasers
defects
silicon dioxide
Photons
dosage
point defects
X rays
ultraviolet lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation. / Imai, Hiroaki; Arai, K.; Isoya, J.; Hosono, H.; Abe, Y.; Imagawa, H.

In: Physical Review B, Vol. 48, No. 5, 1993, p. 3116-3123.

Research output: Contribution to journalArticle

Imai, Hiroaki ; Arai, K. ; Isoya, J. ; Hosono, H. ; Abe, Y. ; Imagawa, H. / Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation. In: Physical Review B. 1993 ; Vol. 48, No. 5. pp. 3116-3123.
@article{6ceedae6db694bdeba665736d5c8eea9,
title = "Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation",
abstract = "Generation of typical paramagnetic centers by γ irradiation was studied for various kinds of synthetic silica glasses. Growth behavior of E' centers and nonbridging oxygen hole centers (NBOHC's) with γ-ray dose depends on contained preexisting point defects. By irradiation at room temperature, E' centers grow linearly and show a saturating tendency in silicas that contain precursors for E' centers, such as oxygen-deficient centers (ODC's), Si-H bonds or Si-Cl bonds. In silicas that contain very few precursors for E' centers, the growth of E' centers with the dose substantially equals that of NBOHC's and both follow a sublinear growth law in which the concentration of the defects is proportional to the square root of the dose. These results lead to the conclusion that γ irradiation fundamentally creates defect pairs of an E' center and an oxygen hole center from an intrinsic Si-O network of amorphous silica; this is in addition to a large amount of E' centers induced from preexisting point defects as precursors. By irradiation at 77 K, E' centers and self-trapped holes are suggested to be formed as the defect pair from the Si-O network, while the conversion of the precursors into E' centers is probably lessened. Concentration of E' centers generated by γ irradiation is almost the same as that of irradiation of ultraviolet lasers and x rays if they are compared based on the absorbed energy. Thus, defect generation with γ rays is suggested to involve similar fundamental processes as those with photons, which have much smaller energy than γ rays.",
author = "Hiroaki Imai and K. Arai and J. Isoya and H. Hosono and Y. Abe and H. Imagawa",
year = "1993",
doi = "10.1103/PhysRevB.48.3116",
language = "English",
volume = "48",
pages = "3116--3123",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "5",

}

TY - JOUR

T1 - Generation of E' centers and oxygen hole centers in synthetic silica glasses by γ irradiation

AU - Imai, Hiroaki

AU - Arai, K.

AU - Isoya, J.

AU - Hosono, H.

AU - Abe, Y.

AU - Imagawa, H.

PY - 1993

Y1 - 1993

N2 - Generation of typical paramagnetic centers by γ irradiation was studied for various kinds of synthetic silica glasses. Growth behavior of E' centers and nonbridging oxygen hole centers (NBOHC's) with γ-ray dose depends on contained preexisting point defects. By irradiation at room temperature, E' centers grow linearly and show a saturating tendency in silicas that contain precursors for E' centers, such as oxygen-deficient centers (ODC's), Si-H bonds or Si-Cl bonds. In silicas that contain very few precursors for E' centers, the growth of E' centers with the dose substantially equals that of NBOHC's and both follow a sublinear growth law in which the concentration of the defects is proportional to the square root of the dose. These results lead to the conclusion that γ irradiation fundamentally creates defect pairs of an E' center and an oxygen hole center from an intrinsic Si-O network of amorphous silica; this is in addition to a large amount of E' centers induced from preexisting point defects as precursors. By irradiation at 77 K, E' centers and self-trapped holes are suggested to be formed as the defect pair from the Si-O network, while the conversion of the precursors into E' centers is probably lessened. Concentration of E' centers generated by γ irradiation is almost the same as that of irradiation of ultraviolet lasers and x rays if they are compared based on the absorbed energy. Thus, defect generation with γ rays is suggested to involve similar fundamental processes as those with photons, which have much smaller energy than γ rays.

AB - Generation of typical paramagnetic centers by γ irradiation was studied for various kinds of synthetic silica glasses. Growth behavior of E' centers and nonbridging oxygen hole centers (NBOHC's) with γ-ray dose depends on contained preexisting point defects. By irradiation at room temperature, E' centers grow linearly and show a saturating tendency in silicas that contain precursors for E' centers, such as oxygen-deficient centers (ODC's), Si-H bonds or Si-Cl bonds. In silicas that contain very few precursors for E' centers, the growth of E' centers with the dose substantially equals that of NBOHC's and both follow a sublinear growth law in which the concentration of the defects is proportional to the square root of the dose. These results lead to the conclusion that γ irradiation fundamentally creates defect pairs of an E' center and an oxygen hole center from an intrinsic Si-O network of amorphous silica; this is in addition to a large amount of E' centers induced from preexisting point defects as precursors. By irradiation at 77 K, E' centers and self-trapped holes are suggested to be formed as the defect pair from the Si-O network, while the conversion of the precursors into E' centers is probably lessened. Concentration of E' centers generated by γ irradiation is almost the same as that of irradiation of ultraviolet lasers and x rays if they are compared based on the absorbed energy. Thus, defect generation with γ rays is suggested to involve similar fundamental processes as those with photons, which have much smaller energy than γ rays.

UR - http://www.scopus.com/inward/record.url?scp=0000345577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000345577&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.48.3116

DO - 10.1103/PhysRevB.48.3116

M3 - Article

VL - 48

SP - 3116

EP - 3123

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 5

ER -