Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W)

Michiaki Ohara, Kiichirou Koyasu, Atsushi Nakajima, Koji Kaya

Research output: Contribution to journalArticlepeer-review

178 Citations (Scopus)

Abstract

We have studied geometric and electronic structures of metal (M) atom doped silicon (Si) clusters, MSin (M = Ti, Hf, Mo and W), using mass spectrometry, a chemical-probe method and photoelectron spectroscopy. In the mass spectra for all of the mixed cluster anions, MSin -, both MSi15 - and MSi16 - were abundantly produced compared to neighbors. Together with the result of the adsorption reactivity and photoelectron spectroscopy, it has been revealed that one metal atom can be encapsulated inside a Sin cage at n ≥ 15.

Original languageEnglish
Pages (from-to)490-497
Number of pages8
JournalChemical Physics Letters
Volume371
Issue number3-4
DOIs
Publication statusPublished - 2003 Apr 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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