Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W)

Michiaki Ohara, Kiichirou Koyasu, Atsushi Nakajima, Koji Kaya

Research output: Contribution to journalArticle

172 Citations (Scopus)

Abstract

We have studied geometric and electronic structures of metal (M) atom doped silicon (Si) clusters, MSin (M = Ti, Hf, Mo and W), using mass spectrometry, a chemical-probe method and photoelectron spectroscopy. In the mass spectra for all of the mixed cluster anions, MSin-, both MSi15- and MSi16- were abundantly produced compared to neighbors. Together with the result of the adsorption reactivity and photoelectron spectroscopy, it has been revealed that one metal atom can be encapsulated inside a Sin cage at n ≥ 15.

Original languageEnglish
Pages (from-to)490-497
Number of pages8
JournalChemical Physics Letters
Volume371
Issue number3-4
DOIs
Publication statusPublished - 2003 Apr 7

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Silicon
Photoelectron spectroscopy
Electronic structure
Metals
photoelectron spectroscopy
electronic structure
Atoms
silicon
metals
spectroscopy
mass spectra
Anions
Mass spectrometry
atoms
mass spectroscopy
reactivity
anions
Adsorption
adsorption

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W). / Ohara, Michiaki; Koyasu, Kiichirou; Nakajima, Atsushi; Kaya, Koji.

In: Chemical Physics Letters, Vol. 371, No. 3-4, 07.04.2003, p. 490-497.

Research output: Contribution to journalArticle

Ohara, Michiaki ; Koyasu, Kiichirou ; Nakajima, Atsushi ; Kaya, Koji. / Geometric and electronic structures of metal (M)-doped silicon cluster (M = Ti, Hf, Mo and W). In: Chemical Physics Letters. 2003 ; Vol. 371, No. 3-4. pp. 490-497.
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