Geometric and electronic structures of terbium-silicon mixed clusters (TbSin; 6 ≤ n ≤ 16)

M. Ohara, K. Miyajima, A. Pramann, Atsushi Nakajima, K. Kaya

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Abstract

The geometric and the electronic structures of terbium-silicon anions, TbSin- (6 ≤ n ≤ 16) were investigated by using photoelectron spectroscopy (PES) and a chemical-probe method. The clusters were produced by a double-rod laser vaporization technique. From trends observed in the electron affinities (EAs), the TbSin- clusters were categorized into three groups of (I) 6 ≤ n ≤ 9, (II) n = 10, 11, and (III) n ≥ 12. Together with adsorption reactivity toward H2O it is concluded that a Tb atom is encapsulated inside a Sin cage at n ≥ 10; Tb@Sin.

Original languageEnglish
Pages (from-to)3702-3705
Number of pages4
JournalJournal of Physical Chemistry A
Volume106
Issue number15
DOIs
Publication statusPublished - 2002 Apr 18

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Terbium
Electron affinity
terbium
Silicon
Photoelectron spectroscopy
Vaporization
Electronic structure
Anions
electronic structure
Adsorption
Atoms
Lasers
silicon
electron affinity
rods
reactivity
photoelectron spectroscopy
anions
trends
adsorption

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Geometric and electronic structures of terbium-silicon mixed clusters (TbSin; 6 ≤ n ≤ 16). / Ohara, M.; Miyajima, K.; Pramann, A.; Nakajima, Atsushi; Kaya, K.

In: Journal of Physical Chemistry A, Vol. 106, No. 15, 18.04.2002, p. 3702-3705.

Research output: Contribution to journalArticle

Ohara, M. ; Miyajima, K. ; Pramann, A. ; Nakajima, Atsushi ; Kaya, K. / Geometric and electronic structures of terbium-silicon mixed clusters (TbSin; 6 ≤ n ≤ 16). In: Journal of Physical Chemistry A. 2002 ; Vol. 106, No. 15. pp. 3702-3705.
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AU - Kaya, K.

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