Geometric and electronic structures of terbium-silicon mixed clusters (TbSin; 6 ≤ n ≤ 16)

M. Ohara, K. Miyajima, A. Pramann, A. Nakajima, K. Kaya

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Abstract

The geometric and the electronic structures of terbium-silicon anions, TbSin - (6 ≤ n ≤ 16) were investigated by using photoelectron spectroscopy (PES) and a chemical-probe method. The clusters were produced by a double-rod laser vaporization technique. From trends observed in the electron affinities (EAs), the TbSin - clusters were categorized into three groups of (I) 6 ≤ n ≤ 9, (II) n = 10, 11, and (III) n ≥ 12. Together with adsorption reactivity toward H2O it is concluded that a Tb atom is encapsulated inside a Sin cage at n ≥ 10; Tb@Sin.

Original languageEnglish
Pages (from-to)3702-3705
Number of pages4
JournalJournal of Physical Chemistry A
Volume106
Issue number15
DOIs
Publication statusPublished - 2002 Apr 18

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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