Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films

M. K. Kang, Takuro Yamaguchi, K. Wada, H. Kuwano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The dose dependence of electrical characteristics in germanium ion (Ge+)-implanted polycrystalline silicon(poly-Si) films amorphized by Ge+implantation and subsequently solid-phase-recrystallized with a low temperature annealing was investigated. It was found that the resistors and pn-diodes fabricated in Ge+-implanted poly-Si films have lower resistivity and higher on/off current ratio compared to those fabricated in as-deposited poly-Si films and Si+-implanted ones, respectively. Improved electrical characteristics for the Ge+-implanted n-channel TFTs, such as the high field effect mobility and the low interface trap density, were obtained when good crystallinity was achieved through implantation dose optimization. Also, the electrical characteristics of these devices were found to improve with plasma hydrogenantion.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages225-228
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
Publication statusPublished - 1996 Jan 1
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 1996 Sep 91996 Sep 11

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference26th European Solid State Device Research Conference, ESSDERC 1996
CountryItaly
CityBologna
Period96/9/996/9/11

Fingerprint

Germanium
Polysilicon
Ions
Resistors
Diodes
Annealing
Plasmas
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Kang, M. K., Yamaguchi, T., Wada, K., & Kuwano, H. (1996). Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 225-228). [5435453] (European Solid-State Device Research Conference). IEEE Computer Society.

Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films. / Kang, M. K.; Yamaguchi, Takuro; Wada, K.; Kuwano, H.

ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. IEEE Computer Society, 1996. p. 225-228 5435453 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, MK, Yamaguchi, T, Wada, K & Kuwano, H 1996, Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5435453, European Solid-State Device Research Conference, IEEE Computer Society, pp. 225-228, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 96/9/9.
Kang MK, Yamaguchi T, Wada K, Kuwano H. Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films. In Rudan M, Baccarani G, editors, ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. IEEE Computer Society. 1996. p. 225-228. 5435453. (European Solid-State Device Research Conference).
Kang, M. K. ; Yamaguchi, Takuro ; Wada, K. ; Kuwano, H. / Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films. ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. editor / Massimo Rudan ; Giorgio Baccarani. IEEE Computer Society, 1996. pp. 225-228 (European Solid-State Device Research Conference).
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