Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy

Toshiharu Saiki, K. Takeuchi, M. Kuwata-Gonokami, T. Mitsuyu, K. Ohkawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.

Original languageEnglish
Pages (from-to)802-805
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 1992 Feb 2
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Excitons
molecular beam epitaxy
nonlinearity
excitons
Polarization
Four wave mixing
picosecond pulses
polarization
four-wave mixing
LDS 751
Spectroscopy
magnetic permeability
Substrates
spectroscopy
Experiments
interactions
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy. / Saiki, Toshiharu; Takeuchi, K.; Kuwata-Gonokami, M.; Mitsuyu, T.; Ohkawa, K.

In: Journal of Crystal Growth, Vol. 117, No. 1-4, 02.02.1992, p. 802-805.

Research output: Contribution to journalArticle

Saiki, T, Takeuchi, K, Kuwata-Gonokami, M, Mitsuyu, T & Ohkawa, K 1992, 'Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy', Journal of Crystal Growth, vol. 117, no. 1-4, pp. 802-805. https://doi.org/10.1016/0022-0248(92)90860-L
Saiki, Toshiharu ; Takeuchi, K. ; Kuwata-Gonokami, M. ; Mitsuyu, T. ; Ohkawa, K. / Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy. In: Journal of Crystal Growth. 1992 ; Vol. 117, No. 1-4. pp. 802-805.
@article{a11f052a3c6244029ed2ed2050cc72aa,
title = "Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy",
abstract = "In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.",
author = "Toshiharu Saiki and K. Takeuchi and M. Kuwata-Gonokami and T. Mitsuyu and K. Ohkawa",
year = "1992",
month = "2",
day = "2",
doi = "10.1016/0022-0248(92)90860-L",
language = "English",
volume = "117",
pages = "802--805",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy

AU - Saiki, Toshiharu

AU - Takeuchi, K.

AU - Kuwata-Gonokami, M.

AU - Mitsuyu, T.

AU - Ohkawa, K.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.

AB - In the low exciton density regime, we study the optical nonlinearity in the exciton resonant region in ZnSe grown by MBE on a GaAs substrate. At low temperature, excitons in bulk ZnSe largely contribute to enhance the nonlinearity. Using reflection type polarization spectroscopy with weak picosecond pulses, we evaluate third-order susceptibility and obtain huge value of χ(3), over 10-2 esu. From a degenerate four-wave mixing experiment with different polarization combinations, it is found that this huge nonlinearity originates from the exciton-exciton interaction.

UR - http://www.scopus.com/inward/record.url?scp=0027107535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027107535&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(92)90860-L

DO - 10.1016/0022-0248(92)90860-L

M3 - Article

VL - 117

SP - 802

EP - 805

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -