TY - JOUR
T1 - Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
AU - Tominaga, Junji
AU - Kolobov, Alexander V.
AU - Fons, Paul J.
AU - Wang, Xiaomin
AU - Saito, Yuta
AU - Nakano, Takashi
AU - Hase, Muneaki
AU - Murakami, Shuichi
AU - Herfort, Jens
AU - Takagaki, Yukihiko
N1 - Publisher Copyright:
© 2015 National Institute for Materials Science.
PY - 2015
Y1 - 2015
N2 - Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.
AB - Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.
KW - GeTe-SbTe
KW - chalcogenide superlattice
KW - computer simulation
KW - magnetoresistance
KW - multiferroics
KW - phase change memory
KW - spintronics
KW - topological insulator
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U2 - 10.1088/1468-6996/16/1/014402
DO - 10.1088/1468-6996/16/1/014402
M3 - Article
AN - SCOPUS:84923771771
SN - 1468-6996
VL - 16
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
IS - 1
M1 - 014402
ER -