Graphene modulation channel-width field effect transistors enabling high carrier velocity acceleration and bandgap introduction

Aizuddin Mohamad, Yuji Awano

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The electrical properties of an advanced graphene FETstructure with local channel width modulation were theoretically investigated with the aim of increasing the local electric field along the channel and creating a bandgap by introducing a graphene nanoribbon (GNR) array. A semi-classical Monte Carlo particle method was used to simulate near ballistic electron transport combination with ab-initio calculation for successfully determining electronic states. Performance improvement was achieved in terms of the carriers' transit time, even though there was a tradeoff between the bandgap creation and electron mobility in graphene.

    Original languageEnglish
    Article number115102
    JournalApplied Physics Express
    Volume8
    Issue number11
    DOIs
    Publication statusPublished - 2015 Nov 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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