Graphene modulation channel-width field effect transistors enabling high carrier velocity acceleration and bandgap introduction

Aizuddin Mohamad, Yuji Awano

Research output: Contribution to journalArticle

Abstract

The electrical properties of an advanced graphene FETstructure with local channel width modulation were theoretically investigated with the aim of increasing the local electric field along the channel and creating a bandgap by introducing a graphene nanoribbon (GNR) array. A semi-classical Monte Carlo particle method was used to simulate near ballistic electron transport combination with ab-initio calculation for successfully determining electronic states. Performance improvement was achieved in terms of the carriers' transit time, even though there was a tradeoff between the bandgap creation and electron mobility in graphene.

Original languageEnglish
Article number115102
JournalApplied Physics Express
Volume8
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

Field effect transistors
Graphene
graphene
Energy gap
field effect transistors
Modulation
modulation
Nanoribbons
Electron mobility
Electronic states
transit time
tradeoffs
Ballistics
electron mobility
ballistics
Electric properties
electrical properties
Electric fields
electric fields
electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Graphene modulation channel-width field effect transistors enabling high carrier velocity acceleration and bandgap introduction. / Mohamad, Aizuddin; Awano, Yuji.

In: Applied Physics Express, Vol. 8, No. 11, 115102, 01.11.2015.

Research output: Contribution to journalArticle

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