Growth and characterization of CuInSe2 epitaxial films for device applications

S. Niki, T. Kurafuji, P. J. Fons, I. Kim, O. Hellman, A. Yamada

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

CuInSe2 (CIS) epitaxial layers have been grown on both GaAs (001) and In0.29Ga0.71As pseudo lattice-matched substrates by molecular beam epitaxy, and characterized for device applications. Despite a large lattice mismatch of Δa/a approximately 2.2%, epitaxial growth of CuInSe2 has been demonstrated on GaAs (001) showing their film properties strongly dependent on the Cu/In ratio. In-rich films had a large number of twins on {112} planes, and were found to be heavily compensated. On the other hand, Cu-rich films showed distinct photoluminescence emissions indicating significantly higher film quality in comparison with In-rich films. Two dimensional reciprocal x-ray intensity area mapping and cross-sectional transmission electron microscopy showed the formation of an interfacial layer in the vicinity of the CuInSe2GaAs interface resulting from the strain-induced interdiffusion between CuInSe2 and GaAs. Reduction in lattice mismatch to Δa/a approximately 0.2% by using In0.29Ga0.71As pseudo lattice-matched substrates made possible the growth of high quality CuInSe2 with predominant free exciton emissions in their photoluminescence spectra and with residual defect densities of as low as p approximately 1×1017 cm-3 implying the growth of device quality CulnSe2 epitaxial films.

Original languageEnglish
Pages (from-to)233-241
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume426
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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