Growth and characterization of short-period silicon isotope superlattices

Yasuo Shimizu, Kohei M Itoh

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report molecular beam epitaxy (MBE) growth of silicon isotope superlattices (SLs) composed of alternating layers of isotopically enriched 28Si and 30Si. In this work, we have prepared short-period 28Sin/30Sin isotope SLs, where n is the number of atomic monolayer, with n = 1, 2, 3, 4, and 7. Zone-folded optical phonon frequencies due to artificial mass periodicity in the growth direction have been observed by Raman spectroscopy. We have used planar bond-charge model to calculate the frequencies. We found that the frequencies of the observed Raman shift agree well with those of optical phonon modes calculated for each SL structure. A detailed analysis revealed that the degree of intermixing between adjacent layers for our condition is approximately two monolayers.

Original languageEnglish
Pages (from-to)160-162
Number of pages3
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

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silicon isotopes
Superlattices
Silicon
Isotopes
superlattices
Monolayers
Molecular beam epitaxy
Raman spectroscopy
periodic variations
molecular beam epitaxy
isotopes
shift

Keywords

  • Molecular beam epitaxy
  • Raman scattering
  • Silicon
  • Superlattices

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Growth and characterization of short-period silicon isotope superlattices. / Shimizu, Yasuo; Itoh, Kohei M.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 160-162.

Research output: Contribution to journalArticle

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