Growth and characterization of 28Sin/ 30Sin isotope superlattices

T. Kojima, R. Nebashi, Kohei M Itoh, Y. Shiraki

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A study is performed on characterization and growth of 28Si n/30Sin isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.

Original languageEnglish
Pages (from-to)2318-2320
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number12
DOIs
Publication statusPublished - 2003 Sep 22

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superlattices
isotopes
phonons
molecular beam epitaxy
Raman spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth and characterization of 28Sin/ 30Sin isotope superlattices. / Kojima, T.; Nebashi, R.; Itoh, Kohei M; Shiraki, Y.

In: Applied Physics Letters, Vol. 83, No. 12, 22.09.2003, p. 2318-2320.

Research output: Contribution to journalArticle

Kojima, T. ; Nebashi, R. ; Itoh, Kohei M ; Shiraki, Y. / Growth and characterization of 28Sin/ 30Sin isotope superlattices. In: Applied Physics Letters. 2003 ; Vol. 83, No. 12. pp. 2318-2320.
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