Growth and characterization of the isotopically enriched 28Si bulk single crystal

Ken Ichiro Takyu; Kohei M. Itoh; Kunihiko Oka; Naoaki Saito; Valerii I. Ozhogin

doi:10.1143/jjap.38.l1493

Growth and characterization of the isotopically enriched ²⁸Si bulk single crystal

Ken Ichiro Takyu, Kohei M. Itoh, Kunihiko Oka, Naoaki Saito, Valerii I. Ozhogin

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

We report on the successful growth of an isotopically enriched ²⁸Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of ²⁸Si (99.924 at%), ²⁹Si (0.073 at%), and ³⁰Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×10¹⁷ cm^-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

Original language	English
Pages (from-to)	L1493-L1495
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	38
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.38.l1493
Publication status	Published - 1999

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.38.l1493

Fingerprint Dive into the research topics of 'Growth and characterization of the isotopically enriched <sup>28</sup>Si bulk single crystal'. Together they form a unique fingerprint.

Cite this

@article{41cfbfc1dd8b468fb1d6c572f22857a8,

title = "Growth and characterization of the isotopically enriched 28Si bulk single crystal",

abstract = "We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.",

author = "Takyu, {Ken Ichiro} and Itoh, {Kohei M.} and Kunihiko Oka and Naoaki Saito and Ozhogin, {Valerii I.}",

year = "1999",

doi = "10.1143/jjap.38.l1493",

language = "English",

volume = "38",

pages = "L1493--L1495",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 B",

}

TY - JOUR

T1 - Growth and characterization of the isotopically enriched 28Si bulk single crystal

AU - Takyu, Ken Ichiro

AU - Itoh, Kohei M.

AU - Oka, Kunihiko

AU - Saito, Naoaki

AU - Ozhogin, Valerii I.

PY - 1999

Y1 - 1999

N2 - We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

AB - We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

UR - http://www.scopus.com/inward/record.url?scp=0033343211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033343211&partnerID=8YFLogxK

U2 - 10.1143/jjap.38.l1493

DO - 10.1143/jjap.38.l1493

M3 - Article

AN - SCOPUS:0033343211

VL - 38

SP - L1493-L1495

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 B

ER -