Growth and characterization of the isotopically enriched 28Si bulk single crystal

Ken Ichiro Takyu, Kohei M Itoh, Kunihiko Oka, Naoaki Saito, Valerii I. Ozhogin

Research output: Contribution to journalArticle

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Abstract

We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number12 B
Publication statusPublished - 1999

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isotopic enrichment
Hole concentration
purification
Purification
mass spectroscopy
Single crystals
Spectroscopy
Impurities
aluminum
Aluminum
impurities
Crystals
single crystals
Ions
room temperature
crystals
ions
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth and characterization of the isotopically enriched 28Si bulk single crystal. / Takyu, Ken Ichiro; Itoh, Kohei M; Oka, Kunihiko; Saito, Naoaki; Ozhogin, Valerii I.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 12 B, 1999.

Research output: Contribution to journalArticle

Takyu, Ken Ichiro ; Itoh, Kohei M ; Oka, Kunihiko ; Saito, Naoaki ; Ozhogin, Valerii I. / Growth and characterization of the isotopically enriched 28Si bulk single crystal. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 12 B.
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