Abstract
We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.
| Original language | English |
|---|---|
| Pages (from-to) | L1493-L1495 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 38 |
| Issue number | 12 B |
| DOIs | |
| Publication status | Published - 1999 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Takyu, K. I., Itoh, K. M., Oka, K., Saito, N., & Ozhogin, V. I. (1999). Growth and characterization of the isotopically enriched 28Si bulk single crystal. Japanese Journal of Applied Physics, Part 2: Letters, 38(12 B), L1493-L1495. https://doi.org/10.1143/jjap.38.l1493