Growth and characterization of the isotopically enriched 28Si bulk single crystal

Ken Ichiro Takyu, Kohei M. Itoh, Kunihiko Oka, Naoaki Saito, Valerii I. Ozhogin

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We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.

Original languageEnglish
Pages (from-to)L1493-L1495
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 B
Publication statusPublished - 1999 Dec 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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