Abstract
We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.
Original language | English |
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Pages (from-to) | L1493-L1495 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 38 |
Issue number | 12 B |
DOIs | |
Publication status | Published - 1999 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)