TY - JOUR
T1 - Growth and characterization of the isotopically enriched 28Si bulk single crystal
AU - Takyu, Ken Ichiro
AU - Itoh, Kohei M.
AU - Oka, Kunihiko
AU - Saito, Naoaki
AU - Ozhogin, Valerii I.
PY - 1999
Y1 - 1999
N2 - We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.
AB - We report on the successful growth of an isotopically enriched 28Si bulk single crystal of the size approximately 4 mm in diameter and approximately 50 mm in length. The isotopic enrichment of 28Si (99.924 at%), 29Si (0.073 at%), and 30Si (0.003 at%) has been determined by secondary-ion-mass spectroscopy (SIMS). The crystal is entirely p-type with the room temperature free-hole concentration approximately 5×1017 cm-3. The majority impurity is found to be aluminum which can be removed easily in the future zone purification process.
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U2 - 10.1143/jjap.38.l1493
DO - 10.1143/jjap.38.l1493
M3 - Article
AN - SCOPUS:0033343211
VL - 38
SP - L1493-L1495
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 B
ER -