Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)

K. Nakahara, H. Takasu, P. Fons, K. Iwata, A. Yamada, K. Matsubara, R. Hunger, S. Niki

Research output: Contribution to journalConference article

40 Citations (Scopus)

Abstract

The integrated use of (1 1 2̄ 0) a-plane sapphire substrates and high temperature growth with low temperature buffer layers have led to high quality undoped ZnO epitaxial films with mobilities as high as 120 cm2V-1 s-1 and residual carrier concentrations as low as 7.6 × 1016 cm-3. Pole figure measurements reveal that a-plane sapphire substrates are effective for the elimination of 30° rotation domains, which usually appear using c-plane sapphire substrates. In particular, when using c-plane sapphire substrates annealing at 1000°C in O2 with c/2-height surface steps, the X-ray diffraction pole figure peak intensity related to these rotation domains increased. The use of low temperature buffer layers allow high temperature ZnO growth on sapphire, as initial ZnO growth does not occur at high initial growth temperature.

Original languageEnglish
Pages (from-to)923-928
Number of pages6
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - 2001 Jul 1
Externally publishedYes
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sep 112000 Sep 15

Keywords

  • A1. Crystal structure
  • A1. Reflection high energy electron diffraction
  • A1. Surface structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Zinc compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)'. Together they form a unique fingerprint.

  • Cite this