Growth and electrical properties of ZnO thin films deposited by novel ion plating method

K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo, S. Niki

Research output: Contribution to journalConference article

44 Citations (Scopus)

Abstract

The URT(Uramoto-gun with Tanaka magnetic field)-IP(ion plating) method is a technique for depositing a thin film on a substrate. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the material properties were evaluated. The quality of ZnO thin films grown by the URT-IP method was found to be sensitive to oxygen supply during growth. It was observed that the saturation point of the growth rate corresponding to the optimum oxygen supply leads to the best electrical properties. The profiles of the dependence of film properties on oxygen supply revealed a part of growth mechanism of the URT-IP method.

Original languageEnglish
Pages (from-to)274-277
Number of pages4
JournalThin Solid Films
Volume445
Issue number2
DOIs
Publication statusPublished - 2003 Dec 15
Externally publishedYes
EventProceedings of the 3rd International Symposium on Transparent Oxide - Tokyo, Japan
Duration: 2003 Apr 102003 Apr 11

Keywords

  • II-VI
  • Ion plating
  • Transparent conductive oxide
  • Zinc oxide
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Iwata, K., Sakemi, T., Yamada, A., Fons, P., Awai, K., Yamamoto, T., Matsubara, M., Tampo, H., & Niki, S. (2003). Growth and electrical properties of ZnO thin films deposited by novel ion plating method. Thin Solid Films, 445(2), 274-277. https://doi.org/10.1016/S0040-6090(03)01160-X