Growth of CuGaSe2 film by molecular beam epitaxy

Akimasa Yamada, Yunosuke Makita, Shigeru Niki, Akira Obara, Paul Fons, Hajime Shibata

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Cu-Ga-Se films of different composition prepared by MBE technique were examined by reflection high energy electron diffraction, electron probe for micro analysis, X-ray diffraction and photoluminescence. The valence stoichiometry of the films is fulfilled at unity molecularity, showing that CuGaSe2 is possible to be grown by MBE. The valence stoichiometry is almost conserved in a wide range of molecularity of the films. It is proven that the films have chalcopyrite structure over a remarkably wide range of Cu-rich composition and that the CuGaSe2 films are epitaxially grown with the c-axis perpendicular to the (001) plane of GaAs substrate. The low temperature photoluminescence on epitaxially grown films of nearly stoichiometric and Cu-rich composition show sharp emission peaks at 1.71 eV attributed to exciton recombination, indicating that the film quality is rather high.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalMicroelectronics Journal
Volume27
Issue number1
DOIs
Publication statusPublished - 1996 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Yamada, A., Makita, Y., Niki, S., Obara, A., Fons, P., & Shibata, H. (1996). Growth of CuGaSe2 film by molecular beam epitaxy. Microelectronics Journal, 27(1), 53-58. https://doi.org/10.1016/0026-2692(95)00076-3