Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata; S. Kimura; P. Fons; A. Yamada; Y. Makita; A. Obara; N. Kobayashi; H. Takahashi; H. Katsumata; J. Tanabe; S. Uekusa

doi:10.1557/proc-438-393

Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge_1-xC_x alloy on Si(100) using a low-energy (50 - 100 eV) C⁺ ion beam and a Ge molecular beam. Metastable Ge_1-xC_x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge_1-xC_x alloys. It was also revealed that the sticking coefficient of C⁺ ions into Ge was approx.28% for E_i = 100 eV and approx.18% for E_i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original language	English
Pages (from-to)	393-398
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	438
DOIs	https://doi.org/10.1557/proc-438-393
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method",

abstract = "A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50 - 100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approx.28% for Ei = 100 eV and approx.18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.",

author = "H. Shibata and S. Kimura and P. Fons and A. Yamada and Y. Makita and A. Obara and N. Kobayashi and H. Takahashi and H. Katsumata and J. Tanabe and S. Uekusa",

year = "1996",

doi = "10.1557/proc-438-393",

language = "English",

volume = "438",

pages = "393--398",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

AU - Shibata, H.

AU - Kimura, S.

AU - Fons, P.

AU - Yamada, A.

AU - Makita, Y.

AU - Obara, A.

AU - Kobayashi, N.

AU - Takahashi, H.

AU - Katsumata, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1996

Y1 - 1996

N2 - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50 - 100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approx.28% for Ei = 100 eV and approx.18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

AB - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50 - 100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approx.28% for Ei = 100 eV and approx.18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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U2 - 10.1557/proc-438-393

DO - 10.1557/proc-438-393

M3 - Conference article

AN - SCOPUS:0030372448

SN - 0272-9172

VL - 438

SP - 393

EP - 398

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

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