Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

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2 Citations (Scopus)

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50 - 100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approx.28% for Ei = 100 eV and approx.18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume438
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., Tanabe, J., & Uekusa, S. (1996). Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method. Materials Research Society Symposium - Proceedings, 438, 393-398. https://doi.org/10.1557/proc-438-393