Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata; S. Kimura; P. Fons; A. Yamada; Y. Makita; A. Obara; N. Kobayashi; H. Takahashi; H. Katsumata; J. Tanabe; S. Uekusa

Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

Research output: Contribution to journal › Conference article › peer-review

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge_1-xC_x alloy on Si(100) using a low-energy (50-100 eV) C⁺ ion beam and a Ge molecular beam. Metastable Ge_1-xC_x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge_1-xC_x alloys. It was also revealed that the sticking coefficient of C⁺ ions into Ge was approximately 28% for E_i = 100 eV and approximately 18% for E_i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original language	English
Pages (from-to)	233-238
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	439
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7cec286b9503400a975fc74d22518c88,

title = "Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method",

abstract = "A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50-100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approximately 28% for Ei = 100 eV and approximately 18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.",

author = "H. Shibata and S. Kimura and P. Fons and A. Yamada and Y. Makita and A. Obara and N. Kobayashi and H. Takahashi and H. Katsumata and J. Tanabe and S. Uekusa",

year = "1997",

language = "English",

volume = "439",

pages = "233--238",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

}

TY - JOUR

T1 - Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

AU - Shibata, H.

AU - Kimura, S.

AU - Fons, P.

AU - Yamada, A.

AU - Makita, Y.

AU - Obara, A.

AU - Kobayashi, N.

AU - Takahashi, H.

AU - Katsumata, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1997

Y1 - 1997

N2 - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50-100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approximately 28% for Ei = 100 eV and approximately 18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

AB - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50-100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approximately 28% for Ei = 100 eV and approximately 18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030682003&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030682003

SN - 0272-9172

VL - 439

SP - 233

EP - 238

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 5 December 1996

ER -

Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

Abstract

ASJC Scopus subject areas

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