Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

Research output: Contribution to journalConference article

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy (50-100 eV) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was approximately 28% for Ei = 100 eV and approximately 18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original languageEnglish
Pages (from-to)233-238
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume439
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., Tanabe, J., & Uekusa, S. (1997). Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method. Materials Research Society Symposium - Proceedings, 439, 233-238.