Growth of Ge1-xCx alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

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