We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2013 Nov|
- Molecular beam epitaxy
- Quantum dots
ASJC Scopus subject areas
- Condensed Matter Physics