Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Jinkwan Kwoen, Katsuyuki Watanabe, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.

Original languageEnglish
Pages (from-to)1496-1499
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number11
DOIs
Publication statusPublished - 2013 Nov
Externally publishedYes

Keywords

  • Molecular beam epitaxy
  • Nanowires
  • Quantum dots

ASJC Scopus subject areas

  • Condensed Matter Physics

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