Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Jinkwan Kwoen; Katsuyuki Watanabe; Yasutomo Ota; Satoshi Iwamoto; Yasuhiko Arakawa

doi:10.1002/pssc.201300316

Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Jinkwan Kwoen, Katsuyuki Watanabe, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g⁽²⁾(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.

Original language	English
Pages (from-to)	1496-1499
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	11
DOIs	https://doi.org/10.1002/pssc.201300316
Publication status	Published - 2013 Nov
Externally published	Yes

Keywords

Molecular beam epitaxy
Nanowires
Quantum dots

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300316

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abstract = "We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.",

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author = "Jinkwan Kwoen and Katsuyuki Watanabe and Yasutomo Ota and Satoshi Iwamoto and Yasuhiko Arakawa",

year = "2013",

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doi = "10.1002/pssc.201300316",

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volume = "10",

pages = "1496--1499",

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TY - JOUR

T1 - Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

AU - Kwoen, Jinkwan

AU - Watanabe, Katsuyuki

AU - Ota, Yasutomo

AU - Iwamoto, Satoshi

AU - Arakawa, Yasuhiko

PY - 2013/11

Y1 - 2013/11

N2 - We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.

AB - We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits.

KW - Molecular beam epitaxy

KW - Nanowires

KW - Quantum dots

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Growth of high-quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Abstract

Keywords

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