Abstract
We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.
Original language | English |
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Pages (from-to) | 144-148 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 468 |
DOIs | |
Publication status | Published - 2017 Jun 15 |
Externally published | Yes |
Keywords
- A3, Selective epitaxy
- A3. Metalorganic vapor phase epitaxy
- B2. Semiconductor III-V materials
- B3. Laser diodes
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry