Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

J. Tatebayashi; S. Kako; J. Ho; Y. Ota; S. Iwamoto; Y. Arakawa

doi:10.1016/j.jcrysgro.2016.12.022

Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the formation of GaAs nanowires (NWs) containing In_0.2Ga_0.8As/GaAs quantum dots (QDs) on patterned Al_0.65Ga_0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al_0.65Ga_0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al_0.65Ga_0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al_0.65Ga_0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm².

Original language	English
Pages (from-to)	144-148
Number of pages	5
Journal	Journal of Crystal Growth
Volume	468
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.12.022
Publication status	Published - 2017 Jun 15
Externally published	Yes

Keywords

A3, Selective epitaxy
A3. Metalorganic vapor phase epitaxy
B2. Semiconductor III-V materials
B3. Laser diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.12.022

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title = "Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications",

abstract = "We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.",

keywords = "A3, Selective epitaxy, A3. Metalorganic vapor phase epitaxy, B2. Semiconductor III-V materials, B3. Laser diodes",

author = "J. Tatebayashi and S. Kako and J. Ho and Y. Ota and S. Iwamoto and Y. Arakawa",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2016.12.022",

language = "English",

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T1 - Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

AU - Tatebayashi, J.

AU - Kako, S.

AU - Ho, J.

AU - Ota, Y.

AU - Iwamoto, S.

AU - Arakawa, Y.

PY - 2017/6/15

Y1 - 2017/6/15

N2 - We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.

AB - We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.

KW - A3, Selective epitaxy

KW - A3. Metalorganic vapor phase epitaxy

KW - B2. Semiconductor III-V materials

KW - B3. Laser diodes

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JO - Journal of Crystal Growth

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ER -

Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

Abstract

Keywords

ASJC Scopus subject areas

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