Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report the formation of GaAs nanowires (NWs) containing In0.2Ga0.8As/GaAs quantum dots (QDs) on patterned Al0.65Ga0.35As/GaAs distributed Bragg reflectors (DBRs) grown on GaAs(111)B substrates. The growth conditions of both GaAs and Al0.65Ga0.35As layers on GaAs(111)B are optimized for the growth of high-quality Al0.65Ga0.35As/GaAs DBRs with (111) orientation in order to obtain high reflectivity at the NW/DBR interface. Moderately high growth temperature and low V/III ratio can mitigate the formation of pyramidal hillocks, resulting in the formation of high-quality DBRs on GaAs(111)B substrates. Optical characterization at 7 K of single GaAs NW cavities containing 75-stacked InGaAs/GaAs NWQDs grown on patterned such Al0.65Ga0.35As/GaAs DBRs/GaAs(111)B substrates exhibits lasing oscillation at 1.43 eV with a threshold pump pulse fluence of 250 μJ/cm2.

Original languageEnglish
Pages (from-to)144-148
Number of pages5
JournalJournal of Crystal Growth
Volume468
DOIs
Publication statusPublished - 2017 Jun 15
Externally publishedYes

Keywords

  • A3, Selective epitaxy
  • A3. Metalorganic vapor phase epitaxy
  • B2. Semiconductor III-V materials
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications'. Together they form a unique fingerprint.

Cite this