Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy

K. Matsubara, S. Niki, M. Watanabe, P. Fons, K. Iwata, A. Yamada

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15 Citations (Scopus)


LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis snowed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.

Original languageEnglish
Pages (from-to)S679-S681
JournalApplied Physics A: Materials Science and Processing
Issue number7
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)


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