Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy

K. Matsubara; S. Niki; M. Watanabe; P. Fons; K. Iwata; A. Yamada

doi:10.1007/s003390051504

Growth of LiNbO₃ epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy

K. Matsubara, S. Niki, M. Watanabe, P. Fons, K. Iwata, A. Yamada

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

LiNbO₃ films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis snowed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO₃ (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO₃ (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.

Original language	English
Pages (from-to)	S679-S681
Journal	Applied Physics A: Materials Science and Processing
Volume	69
Issue number	7
DOIs	https://doi.org/10.1007/s003390051504
Publication status	Published - 1999 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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Cite this

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title = "Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy",

abstract = "LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis snowed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.",

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T1 - Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy

AU - Matsubara, K.

AU - Niki, S.

AU - Watanabe, M.

AU - Fons, P.

AU - Iwata, K.

AU - Yamada, A.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis snowed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.

AB - LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis snowed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.

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Growth of LiNbO₃ epitaxial films by oxygen radical-assisted laser Molecular Beam Epitaxy

Abstract

ASJC Scopus subject areas

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