Growth of Mn4N film with enhanced perpendicular magnetization on glass substrate using MnO seed layer

Wenchang Li; Ren Tanaka; Takeru Usami; Tenghua Gao; Takashi Harumoto; Yoshio Nakamura; Ji Shi

doi:10.1016/j.matlet.2021.131615

Growth of Mn₄N film with enhanced perpendicular magnetization on glass substrate using MnO seed layer

Wenchang Li, Ren Tanaka, Takeru Usami, Tenghua Gao, Takashi Harumoto, Yoshio Nakamura, Ji Shi

Graduate School of Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Ferrimagnetic Mn₄N films have been prepared on glass substrate by reactive magnetron sputtering with in-situ prepared MnO seed layers. Mn₄N film directly grown on glass substrate is used as a control group to compare. It has been found that the Mn₄N film can grow heteroepitaxial on the MnO layer, the crystallinity and perpendicular magnetic anisotropy are significantly improved by the seed layer. The excellent magnetic properties and simple preparation methods will definitely boost the application potential of Mn₄N film in spintronics devices.

Original language	English
Article number	131615
Journal	Materials Letters
Volume	311
DOIs	https://doi.org/10.1016/j.matlet.2021.131615
Publication status	Published - 2022 Mar 15

Keywords

Heteroepitaxial growth
MnN film
MnO seed layer
Perpendicular magnetic anisotropy

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2021.131615

Cite this

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title = "Growth of Mn4N film with enhanced perpendicular magnetization on glass substrate using MnO seed layer",

abstract = "Ferrimagnetic Mn4N films have been prepared on glass substrate by reactive magnetron sputtering with in-situ prepared MnO seed layers. Mn4N film directly grown on glass substrate is used as a control group to compare. It has been found that the Mn4N film can grow heteroepitaxial on the MnO layer, the crystallinity and perpendicular magnetic anisotropy are significantly improved by the seed layer. The excellent magnetic properties and simple preparation methods will definitely boost the application potential of Mn4N film in spintronics devices.",

keywords = "Heteroepitaxial growth, MnN film, MnO seed layer, Perpendicular magnetic anisotropy",

author = "Wenchang Li and Ren Tanaka and Takeru Usami and Tenghua Gao and Takashi Harumoto and Yoshio Nakamura and Ji Shi",

note = "Funding Information: J. S. is grateful for the financial support of JSPS KAKENHI Grant Number 19H00864 and MEXT Grant Number JPMXS0440200021. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

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day = "15",

doi = "10.1016/j.matlet.2021.131615",

language = "English",

volume = "311",

journal = "Materials Letters",

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T1 - Growth of Mn4N film with enhanced perpendicular magnetization on glass substrate using MnO seed layer

AU - Li, Wenchang

AU - Tanaka, Ren

AU - Usami, Takeru

AU - Gao, Tenghua

AU - Harumoto, Takashi

AU - Nakamura, Yoshio

AU - Shi, Ji

PY - 2022/3/15

Y1 - 2022/3/15

N2 - Ferrimagnetic Mn4N films have been prepared on glass substrate by reactive magnetron sputtering with in-situ prepared MnO seed layers. Mn4N film directly grown on glass substrate is used as a control group to compare. It has been found that the Mn4N film can grow heteroepitaxial on the MnO layer, the crystallinity and perpendicular magnetic anisotropy are significantly improved by the seed layer. The excellent magnetic properties and simple preparation methods will definitely boost the application potential of Mn4N film in spintronics devices.

AB - Ferrimagnetic Mn4N films have been prepared on glass substrate by reactive magnetron sputtering with in-situ prepared MnO seed layers. Mn4N film directly grown on glass substrate is used as a control group to compare. It has been found that the Mn4N film can grow heteroepitaxial on the MnO layer, the crystallinity and perpendicular magnetic anisotropy are significantly improved by the seed layer. The excellent magnetic properties and simple preparation methods will definitely boost the application potential of Mn4N film in spintronics devices.

KW - Heteroepitaxial growth

KW - MnN film

KW - MnO seed layer

KW - Perpendicular magnetic anisotropy

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